ASDM40N80KQ datasheet, подбор замены

 ..1. Size:628K  ascend
 asdm40n80kq.pdf 

ASDM40N80KQ 40V N-Channel MOSFET Features Product Summary Low On-Resistance V 40 V DSS Fast Switching Speed 100% avalanche tested R 4.0 m DS(ON)-Typ@VGS=10V Lead Free and Green Devices I 80 A D Available (RoHS Compliant) Application DC/DC Converters On board power for server Synchronous rectification N-channel Absolute Maximum Ratings Symbol Pa

 5.1. Size:461K  1
 asdm40n80q.pdf 

ASDM40N80Q 40V N-CHANNEL MOSFET Features Product Summary Low On-Resistance V 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 m DS(ON)-Typ@VGS=10V Lead Free and Green Devices I 80 A D Available (RoHS Compliant) Application DC/DC Converters On board power for server Synchronous rectification top view DFN5x6-8 Absolute Maximum Ratings

 5.2. Size:461K  ascend
 asdm40n80q.pdf 

ASDM40N80Q 40V N-CHANNEL MOSFET Features Product Summary Low On-Resistance V 40 V DSS Fast Switching Speed 100% avalanche tested R 3.5 m DS(ON)-Typ@VGS=10V Lead Free and Green Devices I 80 A D Available (RoHS Compliant) Application DC/DC Converters On board power for server Synchronous rectification top view DFN5x6-8 Absolute Maximum Ratings

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 asdm40n52e-r.pdf 

ASDM40N52 40V N-Channel MOSFET General Features Product Summary Low On-Resistance V 40 V DSS 100% avalanche tested 4.2 R m DS(ON)-Typ Fast Switching Speed I 52 A Excellent package for good heat dissipation D Application DC/DC Converters Pin1 On board power for server Synchronous rectification Absolute Maximum Ratings (T =25 unless otherwise s

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 asdm40n100p.pdf 

ASDM40N100P 40V N-Channel MOSFET Features Product Summary Low On-Resistance V DS 40 V Fast Switching Speed 100% avalanche tested R DS(on),TYP@ VGS=10 V 4.0 m Lead Free and Green Devices ID A 100 Available (RoHS Compliant) Application DC/DC Converters On board power for server Synchronous rectification Absolute Maximum Ratings Symbol Parameter Rat

 7.3. Size:434K  ascend
 asdm40n60kq.pdf 

ASDM40N60KQ 40V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 40 V Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 5.8 m Excellent package for good heat dissipation I D A 60 Special process technology for high ESD capability Application

 7.4. Size:594K  ascend
 asdm40n40e.pdf 

ASDM40N40E 40V N-Channel MOSFET General Features Product Summary Low On-Resistance V DS 40 V 100% avalanche tested Fast Switching Speed R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 40 A Application DC/DC Converters On board power for server Synchronous rectification DFN3.3*3.3-8 Absolute Maximum Ratings (T =25 unl

 7.5. Size:436K  ascend
 asdm40n52.pdf 

ASDM40N52 40V N-Channel MOSFET General Features Product Summary Low On-Resistance V 40 V DSS 100% avalanche tested 4.2 R m DS(ON)-Typ Fast Switching Speed I 52 A Excellent package for good heat dissipation D Application DC/DC Converters Pin1 On board power for server Synchronous rectification Absolute Maximum Ratings (T =25 unless otherwise s