ASDM20P13S datasheet, подбор замены

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 asdm20p13s.pdf 

ASDM20P13S -20V P-Channel MOSFET Product Summary Features Advance high cell density Trench technology BVDSS V -20 Low R to minimize conductive loss DS(ON) RDS(on),Typ@VGS=-10V 6.0 m Low Gate Charge for fast switching Low Thermal resistance ID -13 A Application MB/VGA Vcore SMPS 2nd Synchronous Rectifier POL application BLDC Motor driver D G S SO

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 asdm20p09zb.pdf 

ASDM20P09ZB -20V P-Channel MOSFET Product Summary General Features R

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 asdm20n12zb.pdf 

ASDM20N12ZB 20V N-CHANNEL MOSFET Product Summary Features 20V/12A V DS 20 V Super High Dense Cell Design R DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and Rugged I D 12 A Lead Free Available (RoHS Compliant) Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top view D G S SOT-23-3 Absolute Maximum Ratings (TA=25 C Unless O

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 asdm20n90q.pdf 

ASDM20N90Q 20V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed V DS 20 V Green Device Available RDS(on),TYP@VGS=10V 1.5 m Super Low Gate Charge RDS(on),TYP@VGS=4.5V 1.8 m Excellent CdV/dt effect decline Advanced high cell density Trench technology I D 90 A Application Power Management in Inverter System top view PDFN5*6-8 Maximum rati

 8.3. Size:413K  ascend
 asdm20n100q.pdf 

ASDM20N100Q 20V N-Channel MOSFET Product Summary General Description 20V /100A Single N Power MOSFET V DS 20 V Very low on-resistance RDS(on) @ R DS(on),TYP@ VGS=10 V 1. 3 m VGS=4.5 V I D 100 A Pb-free lead plating; RoHS compliant DFN5x6-8 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 20 V TA=25 C 100 Continuous Drain Cur

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 asdm20n20kq.pdf 

ASDM20N20KQ 20V N-Channel MOSFET Product Summary Features Super high dense cell design for BVDSS 20 V extremely low RDS(on) High power and current handing RDS(on),Typ.@VGS=4.5V 20 m capability Lead free product is acquired 20 ID A Application Load Switch PWM Application Power management Schematic diagram TO-252-2L top view Absolute Maximum Ratin

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 asdm20n60.pdf 

ASDM20N60 20V N-Channel MOSFET General Features Product Summary Low Gate Charge Enhancement mode BVDSS 20 V Fast Switching RDS(on),Typ.@ VGS=4.5 V 5 m High Power and Current Handling Capability 60 ID A Applications DC-DC primary bridge DC-DC Synchronous rectification DC FAN D G 1 s TO-252 N-channel Absolute Maximum Ratings Symbol Para