ASDM30DN30E datasheet, подбор замены

 ..1. Size:750K  ascend
 asdm30dn30e.pdf 

ASDM30DN30E 30V Dual N-Channel Power MOSFET Product Summary Description V DS 30 V l100% EAS Guaranteed R DS(on),Typ@ VGS=10 V 16 m lGreen Device Available I D 30 A lSuper Low Gate Charge lExcellent CdV/dt effect decline lAdvanced high cell density Trench technology PDFN 3.3x3.3-8 NMOS Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 30 V DS V

 6.1. Size:478K  ascend
 asdm30dn40e.pdf 

ASDM30DN40E 30V Dual N-Channel Power MOSFET Features Product Summary Enhancement mode V DS 30 V Low on-resistance RDS(on) @ VGS=4.5 V R DS(on),TYP@ VGS=10 V 8 m Fast Switching and High efficiency I D 30 A Pb-free lead plating; RoHS compliant PDFN 3.3x3.3-8 NMOS Maximum ratings, at T A=25 C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DS

 8.1. Size:435K  1
 asdm30p30ctd-r.pdf 

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 8.2. Size:577K  1
 asdm30p30ctd.pdf 

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 8.3. Size:514K  1
 asdm30p11td-r.pdf 

ASDM30P11TD -30V P-Channel MOSFET Product Summary Features Low FOM RDS(on) Qgd 100% avalanche tested V DS -30 V Easy to use/drive RoHS compliant R DS(on),TYP@ VGS=10 V 6.4 m I D -55 A Application Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load Switch PDFN3*3-8 Absolute Maximum Ratings TA = 25 u

 8.4. Size:315K  1
 asdm30n65e-r.pdf 

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

 8.5. Size:348K  1
 asdm30n55e-r.pdf 

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

 8.6. Size:356K  ascend
 asdm30n90q.pdf 

ASDM30N90Q 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 4.3 m High Power and Current Handling Capability 90 Application ID A Load Swtich PWM applications Power management DFN5*6-8 N-Channel Absolute Maximum Ratings (TA =25 C unless ot

 8.7. Size:285K  ascend
 asdm3080kq.pdf 

ASDM3080KQ 30V N-CHANNEL MOSFET Product Summary Features 30V,80A R =4.8m (Typ.) @ V =10V V DS 30 V DS(ON) GS R =7.5m (Typ.) @ V =4.5V DS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate Charge DS(ON) 80 A ID Application Load Switch PWM Application Absolute Maximum Ratings (T =25 unless othe

 8.8. Size:871K  ascend
 asdm30n120kq.pdf 

ASDM30N120KQ 30V N-Channel MOSFET Product Summary Features V DS 30 V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.5 m Fast Switching I D 120 A 100% Avalanche test Pb-free lead plating; RoHS compliant Schematic diagram TO-252-2L top view Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rat

 8.9. Size:878K  ascend
 asdm30p100kq.pdf 

ASDM30P100KQ -30V P-Channel MOSFET Product Summary General Features Advanced groove technology is adopted BVDSS -30 V Provide excellent R DS(ON) RDS(on).Typ.@VGS=-10V m 5.0 Low gate charge and operate at low gate voltage Application ID -100 A Lithium battery protection Wireless impact Mobile phone fast charging Schematic diagram TO-252-2L top view

 8.10. Size:805K  ascend
 asdm30n100kq.pdf 

ASDM30N100KQ 30V N-Channel MOSFET Features Product Summary 100% EAS Guaranteed V DS 30 V Green Device Available R DS(on),Typ@ VGS=10 V 3.3 m Super Low Gate Charge I D 100 A Excellent CdV/dt effect decline Advanced high cell density Trench technology Application Lithium-Ion Secondary Batteries Load Switch DC-DC converters and Off-line UPS Motor Contro

 8.11. Size:1442K  ascend
 asdm30p30be.pdf 

ASDM30P30BE -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 10 m DS(ON).Typ@ VGS=-10V Application I -30 A D MB / VGA / Vcore POL Applications PDFN3.3*3.3-8 P-MOSFET Absolute Maximum Ratings (T =25 unless otherwise specified) A Symbol Parameter Max. Units V Drain-Source Voltage -30 V

 8.12. Size:342K  ascend
 asdm3050kq.pdf 

ASDM3050KQ 30V N-Channel MOSFET Product Summary Features High density cell design for ultra low Rdson V DS 30 V Fully characterized Avalanche voltage and current R DS(on),TYP@ VGS=10 V 9 m Good stability and uniformity with high EAS I D 50 A Excellent package for good heat dissipation Special process technology for high ESD capability Application Power

 8.13. Size:435K  ascend
 asdm30p30ctd.pdf 

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 8.14. Size:521K  ascend
 asdm3020.pdf 

ASDM3020 30V Dual N-Channel MOSFET Features Product Summary Dual N-Channel,5V Logic Level Control Enhancement mode V 30 V DSS Fast Switching 11.5 R m DS(ON)-Max High Effective I A D 11.8 Application Power Management in Inverter System Synchronous Rectification top view ASCEND SOP-8 NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM3020

 8.15. Size:315K  ascend
 asdm30n65e.pdf 

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

 8.16. Size:303K  ascend
 asdm30n90kq.pdf 

ASDM30N90KQ 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability 90 ID A Application Load Swtich PWM applications Power management 1 TO-252 N-channel Absolute Maximum Ratings (TA =25 C unless o

 8.17. Size:514K  ascend
 asdm30p11td.pdf 

ASDM30P11TD -30V P-Channel MOSFET Product Summary Features Low FOM RDS(on) Qgd 100% avalanche tested V DS -30 V Easy to use/drive RoHS compliant R DS(on),TYP@ VGS=10 V 6.4 m I D -55 A Application Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load Switch PDFN3*3-8 Absolute Maximum Ratings TA = 25 u

 8.18. Size:348K  ascend
 asdm30n55e.pdf 

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

 8.19. Size:636K  ascend
 asdm30n75kq.pdf 

ASDM30N75KQ 30V N-CHANNEL MOSFET Features Product Summary 30V,75A R =4.8m (Typ.) @ V =10V V DS 30 V DS(ON) GS R =6.5m (Typ.) @ V =4.5V DS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate Charge DS(ON) 75 A ID Application Load Switch PWM Application Absolute Maximum Ratings (T =25 unless

 8.20. Size:596K  ascend
 asdm30n150q.pdf 

ASDM30N150Q 30V N-Channel MOSFET Product Summary Features V DS 30 V High ruggedness Low Gate Charge (Typ 143nC) R DS(on),Typ@ VGS=10 V 1.7 m Improved dv/dt Capability 100% Avalanche Tested I D 150 A Application Synchronous Rectification, Li Battery Protect Board, Inverter top view DFN5x6-8 Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain

 8.21. Size:418K  ascend
 asdm30p09zb.pdf 

ASDM30P09ZB -30V P-Channel MOSFET Product Summary General Features R

 8.22. Size:740K  ascend
 asdm3050.pdf 

ASDM3050 30V N-CHANNEL MOSFET Features Product Summary High density cell design for ultra low Rdson V DS 30 V Fully characterized Avalanche voltage and current R DS(on),TYP@ VGS=10 V 9 m Good stability and uniformity with high EAS R DS(on),TYP@ VGS=4.5 V 11.3 m Excellent package for good heat dissipation I D 50 A Special process technology for high ESD

 8.23. Size:516K  ascend
 asdm3010s.pdf 

ASDM3010S 30V Dual N-Channel MOSFET Features Product Summary Dual N-Channel,5V Logic Level Control Enhancement mode V DS 30 V Fast Switching High Effective R DS(on),TYP@ VGS=10 V 15.5 m Application I D 9 A Power Management in Inverter System Synchronous Rectification top view ASCEND SOP-8 Maximum ratings, at T j=25 C, unless otherwise specified S

 8.24. Size:510K  ascend
 asdm30n120q.pdf 

ASDM30N120Q 30V N-Channel MOSFET Product Summary Features V DS 30 V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.1 m Fast Switching I D 120 A 100% Avalanche test Pb-free lead plating; RoHS compliant top view DFN5x6-8 Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rating Unit 30 V V(BR

 8.25. Size:1008K  ascend
 asdm3010.pdf 

ASDM3010 30V Dual N-Channel MOSFET Product Summary Features Dual N-Channel,5V Logic Level Control V 30 V DSS Enhancement mode 15 R m DS(ON)-Typ Fast Switching High Effective I A D 9 Application Power Management in Inverter System Synchronous Rectification top view ASCEND SOP-8 Maximum ratings, at T j=25 C, unless otherwise specified Symbol