MSH100N045SA datasheet, подбор замены

 ..1. Size:1312K  bruckewell
 msh100n045sa.pdf 

MSH100N045SA N-Channel 100-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

 8.1. Size:1263K  jiejie micro
 jmsh1001mtl.pdf 

100V, 467A, 1.0m N-channel Power SGT MOSFET JMSH1001MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 467 A RDS(ON)_Typ(@VGS=10V 1.0 mW Applications Load Switch PWM Application Power Management PowerJE 10

 8.2. Size:654K  jiejie micro
 jmsh1008pg.pdf 

JMSH1008PG 100V 6.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 80 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.5 Pb-free Lead Plating

 8.3. Size:327K  jiejie micro
 jmsh1006ac jmsh1006ae.pdf 

JMSH1006AC JMSH1006AE 100V 5.2m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 114 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., I

 8.4. Size:1077K  jiejie micro
 jmsh1008pc jmsh1008pe.pdf 

JMSH1008PC JMSH1008PE 100V 6.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 113 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 8.5. Size:1251K  jiejie micro
 jmsh1002ytl.pdf 

100V, 215A, 2.3m N-channel Power SGT MOSFET JMSH1002YTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 215 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.3 mW Applications Load Switch PWM Application Power Ma

 8.6. Size:1253K  jiejie micro
 jmsh1004mc.pdf 

100V, 120A, 4.5m N-channel Power SGT MOSFET JMSH1004MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 117 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S TO

 8.7. Size:1206K  jiejie micro
 jmsh1006pg.pdf 

100V, 90A, 5.0m N-channel Power SGT MOSFET JMSH1006PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 90 A RDS(ON)_Typ(@VGS=10V 5.0 mW Applications Load Switch PWM Application Power Management D G S PDFN5

 8.8. Size:1257K  jiejie micro
 jmsh1003ttl.pdf 

100V, 184A, 3.5m N-channel Power SGT MOSFET JMSH1003TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 3.5 mW Applications Load Switch PWM Application Power Management PowerJE 10

 8.9. Size:1290K  jiejie micro
 jmsh1006pk.pdf 

100V, 61A, 5.9m N-channel Power SGT MOSFET JMSH1006PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 61 A RDS(ON)_Typ(@VGS=10V 5.9 mW Applications Load Switch PWM Application Power Management D G S Sche

 8.10. Size:1188K  jiejie micro
 jmsh1003ne7.pdf 

100V, 167A, 3.1m N-channel Power SGT MOSFET JMSH1003NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 167 A RDS(ON)_Typ(@VGS=10V 3.1 mW Applications Load Switch PWM Application Power Management TO-263-7L

 8.11. Size:1257K  jiejie micro
 jmsh1001ntlq.pdf 

100V, 312A, 1.7m N-channel Power SGT MOSFET JMSH1001NTLQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 2.9 V 100% Vds Tested ID(@VGS=10V) 312 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 Qualified Applications Load Switch PWM Appli

 8.12. Size:1262K  jiejie micro
 jmsh1001ptl.pdf 

100V, 367A, 1.2m N-channel Power SGT MOSFET JMSH1001PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 367 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10

 8.13. Size:339K  jiejie micro
 jmsh1002aeq.pdf 

JMSH1002AEQ 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 8.14. Size:1190K  jiejie micro
 jmsh1008pgq.pdf 

100V, 90A, 7.4m N-channel Power SGT MOSFET JMSH1008PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 90 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 7.4 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 8.15. Size:311K  jiejie micro
 jmsh1004bgq.pdf 

JMSH1004BGQ 100V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V) 3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 8.16. Size:1222K  jiejie micro
 jmsh1003tf.pdf 

100V, 80A, 4.4m N-channel Power SGT MOSFET JMSH1003TF Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 80 A RDS(ON)_Typ(@VGS=10V 4.4 mW Applications Load Switch PWM Application Power Management D G S TO-22

 8.17. Size:338K  jiejie micro
 jmsh1004ng.pdf 

JMSH1004NG 100V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V) 4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics

 8.18. Size:364K  jiejie micro
 jmsh1004nc jmsh1004ne.pdf 

JMSH1004NC JMSH1004NE 100V 4.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 143 A RDS(ON) (@ VGS = 10V) 4.1 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl

 8.19. Size:1183K  jiejie micro
 jmsh1001ntl.pdf 

100V, 400A, 1.4m N-channel Power SGT MOSFET JMSH1001NTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 400 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management PowerJE 10

 8.20. Size:1077K  jiejie micro
 jmsh1002tc jmsh1002te.pdf 

JMSH1002TC JMSH1002TE 100V 2.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 8.21. Size:396K  jiejie micro
 jmsh1002nc jmsh1002ne.pdf 

JMSH1002NC JMSH1002NE 100V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V) 2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl

 8.22. Size:1231K  jiejie micro
 jmsh1006pe.pdf 

100V, 116A, 5.7m N-channel Power SGT MOSFET JMSH1006PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 116 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.7 mW Applications Load Switch PWM Application Power Man

 8.23. Size:622K  jiejie micro
 jmsh1001atlq.pdf 

JMSH1001ATLQ 100V 1.3mW TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat

 8.24. Size:306K  jiejie micro
 jmsh1008agq.pdf 

JMSH1008AGQ 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 87 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 8.25. Size:310K  jiejie micro
 jmsh1006ag.pdf 

JMSH1006AG 100V 5.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 102 A RDS(ON)_Typ (@ VGS = 10V) 5.3 Pb-free Lead Plating m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial

 8.26. Size:381K  jiejie micro
 jmsh1003atlq.pdf 

JMSH1003ATLQ 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Ap

 8.27. Size:327K  jiejie micro
 jmsh1003agq.pdf 

JMSH1003AGQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 8.28. Size:657K  jiejie micro
 jmsh1002ac jmsh1002ae.pdf 

JMSH1002AC JMSH1002AE 100V 1.6mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Ind

 8.29. Size:364K  jiejie micro
 jmsh1005pc jmsh1005pe.pdf 

JMSH1005PC JMSH1005PE 100V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 132 A RDS(ON) (@ VGS = 10V) 4.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicl

 8.30. Size:1065K  jiejie micro
 jmsh1004ac jmsh1004ae.pdf 

JMSH1004AC JMSH1004AE 100V 3.0mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Aut

 8.31. Size:1202K  jiejie micro
 jmsh1002ns.pdf 

100V, 274A, 3.2m N-channel Power SGT MOSFET JMSH1002NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 274 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power Man

 8.32. Size:1182K  jiejie micro
 jmsh1001ne7.pdf 

100V, 300A, 1.4m N-channel Power SGT MOSFET JMSH1001NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 300 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management TO-263 -7L

 8.33. Size:313K  jiejie micro
 jmsh1003ae7q.pdf 

JMSH1003AE7Q 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 196 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 2.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 8.34. Size:325K  jiejie micro
 jmsh1001atl.pdf 

JMSH1001ATL 100V 1.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indust

 8.35. Size:341K  jiejie micro
 jmsh1002bc jmsh1002be.pdf 

JMSH1002BC JMSH1002BE 100V 2.1m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., I

 8.36. Size:1306K  jiejie micro
 jmsh1006pc.pdf 

100V, 116A, 6.0m N-channel Power SGT MOSFET JMSH1006PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 116 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.0 mW Applications Load Switch PWM Application Power Mana

 8.37. Size:1155K  jiejie micro
 jmsh1002re.pdf 

100V, 241A, 2.2m N-channel Power SGT MOSFET JMSH1002RE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 100 V 100% Vds TESTED VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mW Applications Load Switch PWM Application Power Mana

 8.38. Size:380K  jiejie micro
 jmsh1003atl.pdf 

JMSH1003ATL 100V 2.7m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 228 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Compu

 8.39. Size:1235K  jiejie micro
 jmsh1006pgs.pdf 

100V, 101A, 5.6m N-channel Power SGT MOSFET JMSH1006PGS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.2 V Halogen-free; RoHS-compliant ID(@VGS=10V) 101 A RDS(ON)_Typ(@VGS=10V 5.6 mW Applications Load Switch PWM Application Power Management D G S PD

 8.40. Size:1237K  jiejie micro
 jmsh1005pg.pdf 

100V, 110A, 4.8m N-channel Power SGT MOSFET JMSH1005PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 110 A RDS(ON)_Typ(@VGS=10V 4.8 mW Applications Load Switch PWM Application Power Management D G S PD

 8.41. Size:623K  jiejie micro
 jmsh1002as.pdf 

JMSH1002AS 100V 1.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus

 8.42. Size:365K  jiejie micro
 jmsh1001nc jmsh1001ne.pdf 

JMSH1001NC JMSH1001NE 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V) 1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool,

 8.43. Size:746K  jiejie micro
 jmsh1003nc jmsh1003ne.pdf 

JMSH1003NC JMSH1003NE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 213 A RDS(ON) (@ VGS = 10V) 3.0 Halogen-free and RoHS-compliant mW Applications Motor Driving in Power Tool, E-vehicle, Robotics Current Switc

 8.44. Size:354K  jiejie micro
 jmsh1003agwq.pdf 

JMSH1003AGWQ 100V 2.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 178 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V) 2.8 m Automated Optical Inspection (AOI) Pb-free Lead Plat

 8.45. Size:635K  jiejie micro
 jmsh1003tc jmsh1003te.pdf 

JMSH1003TC JMSH1003TE 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 223 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 Pb-free L

 8.46. Size:367K  jiejie micro
 jmsh1003ng.pdf 

JMSH1003NG 100V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 159 A RDS(ON)_Typ (@ VGS = 10V) 3.1 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial

 8.47. Size:1068K  jiejie micro
 jmsh1008ac jmsh1008ae.pdf 

JMSH1008AC JMSH1008AE 100V 6.8mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% R Tested g ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 6.8 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indu

 8.48. Size:350K  jiejie micro
 jmsh1008akq.pdf 

JMSH1008AKQ 100V 6.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 92 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 6.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 8.49. Size:1205K  jiejie micro
 jmsh1004rg.pdf 

100V, 117A, 4.6m N-channel Power SGT MOSFET JMSH1004RG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 117 A RDS(ON)_Typ(@VGS=10V 4.6 mW Applications Load Switch PWM Application Power Management D G S PD

 8.50. Size:327K  jiejie micro
 jmsh1001btl.pdf 

JMSH1001BTL 100V 1.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 300 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus

 8.51. Size:312K  jiejie micro
 jmsh1006ak.pdf 

JMSH1006AK 100V 5.5m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-Free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.5 m RoHS and Halogen-Free Compliant Applications Power Managerment in Telecom., Industrial Au

 8.52. Size:1194K  jiejie micro
 jmsh1008pk.pdf 

100V, 56A, 6.3m N-channel Power SGT MOSFET JMSH1008PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 56 A RDS(ON)_Typ(@VGS=10V 6.3 mW Applications Load Switch PWM Application Power Management D G S TO-2

 8.53. Size:326K  jiejie micro
 jmsh1003ag.pdf 

JMSH1003AG 100V 2.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 144 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.8 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial A

 8.54. Size:335K  jiejie micro
 jmsh1004beq.pdf 

JMSH1004BEQ 100V 3.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V) 3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati

 8.55. Size:956K  jiejie micro
 jmsh1004bc jmsh1004be.pdf 

JMSH1004BC JMSH1004BE 100V 3.7mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 8.56. Size:305K  jiejie micro
 jmsh1001ae7.pdf 

JMSH1001AE7 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial

 8.57. Size:355K  jiejie micro
 jmsh1002asq.pdf 

JMSH1002ASQ 100V 1.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V) 1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 8.58. Size:1060K  jiejie micro
 jmsh1004aeq.pdf 

JMSH1004AEQ 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 216 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-2

 8.59. Size:353K  jiejie micro
 jmsh1001ns.pdf 

JMSH1001NS 100V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 308 A RDS(ON)_Typ (@ VGS = 10V) 1.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, R

 8.60. Size:1075K  jiejie micro
 jmsh1002yc jmsh1002ye.pdf 

JMSH1002YC JMSH1002YE 100V 3.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

 8.61. Size:1261K  jiejie micro
 jmsh1002ttl.pdf 

100V, 280A, 1.6m N-channel Power SGT MOSFET JMSH1002TTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 280 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management PowerJE 10

 8.62. Size:448K  jiejie micro
 jmsh1004bg.pdf 

JMSH1004BG 100V 3.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto

 8.63. Size:350K  jiejie micro
 jmsh1001ae7q.pdf 

JMSH1001AE7Q 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica

 8.64. Size:367K  jiejie micro
 jmsh1002ntl.pdf 

JMSH1002NTL 100V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V) 2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics

 8.65. Size:290K  jiejie micro
 jmsh1008ag.pdf 

JMSH1008AG 100V 6.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 92 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 6.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation

 8.66. Size:353K  jiejie micro
 jmsh1004bgwq.pdf 

JMSH1004BGWQ 100V 3.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th) 2.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 152 A Wettable Flanks design support high manufacturability and RDS(ON) (@ VGS = 10V) 3.6 m Automated Optical Inspection (AOI) Pb-free Lead Plat