DMP3015LSSSINGLE P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 11m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 17m @ VGS = -4.5V Moisture Sensitivity: Level 1 per J-STD-020D

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON)Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET PowerDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On-State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID Max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) Max TC = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -40A -30V

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON) ensures on-state losses are minimized BVDSS RDS(ON) max TC = +25C Small form factor thermally efficient package enables higher density end products 9.5m @ VGS = -10V -35A -30V Occupies just 33% of the board area occupied b

DMP3017SFGQ 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID Max Low RDS(ON) Ensures On-State Losses Are Minimized V(BR)DSS RDS(ON) Max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enab

DMP3012LPSP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency Low Minimizes On State Losses 9m @ VGS = -10V -45A RDS(ON)-30V Low Input Capacitance 12m @ VGS = -4.5V -35A Fast Switching Speed

DMP3010LPSP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID High Conversion EfficiencyV(BR)DSS RDS(ON) TA = 25C (Note 5) Low Minimizes On State Losses RDS(on) Low Input Capacitance 7.5m @ VGS = -10V -36A Fast Switching Speed -30V

DMP3010LPSQ GreenP-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package - Cooler Running Applications V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency 7.5m @ VGS = -10V -36A Low RDS(ON) Minimizes On State Losses -30V 10m @ VGS = -4.5V -31A Low Input Capacitance Fast Switching Speed

DMP3010LK3P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-ResistanceV(BR)DSS RDS(on) max TA = 25C Fast Switching Speed "Green" Device (Note 1) 8m @ VGS = -10V -17A -30V Qualified to AEC-Q101 Standards for High Reliability 10.2m @ VGS = -4.5V -14.5A Mechanical Data Description and Appl

DMP3017SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14m @ VGS = -10V -10.4A Low Input/Output Leakage -30V 25m @ VGS = -4.5V -7.8A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMP3018SFK P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on)max Low Input Capacitance TA = +25C 14.5m @ VGS = -10V -10.2A Low Input/Output Leakage -30V 25.5m @ VGS = -4.5V -7.7A ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

DMP3013SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features and Benefits ID max Low RDS(ON)Ensures On-State Losses are Minimized BVDSS RDS(ON) max TC = +25C Small form Factor Thermally Efficient Package Enables Higher Density End Products 9.5m @ VGS = -10V -35A -30V Occupies 33% of the Board Area Occupied by SO-8 En

DMP3017SFG30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits ID max Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) max TA = +25C Small form factor thermally efficient package enables higher density end products 10m @ VGS = -10V -11.5A -30V Occupies just 33% of the board area occupied by SO-8 enabli

DMP3010LPSwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.004 at VGS = - 10 V - 120COMPLIANT - 30 130 nC 100 % Rg Tested0.006 at VGS = - 4.5 V - 100APPLICATIONS Notebook- Load SwitchSDFN5X6Top ViewTop View Bottom View18G27364

isc P-Channel MOSFET Transistor DMP3010LK3FEATURESDrain Current I = -17A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur