Справочник MOSFET. DMP3098LSS

 

DMP3098LSS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMP3098LSS
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 336 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: SO8

 Аналог (замена) для DMP3098LSS

 

 

DMP3098LSS Datasheet (PDF)

 ..1. Size:200K  diodes
 dmp3098lss.pdf

DMP3098LSS DMP3098LSS

DMP3098LSSSINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 65m @ VGS = -10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 115m @ VGS = -4.5V Moisture Sensitivity: Leve

 5.1. Size:159K  diodes
 dmp3098lsd.pdf

DMP3098LSS DMP3098LSS

DMP3098LSDDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Dual P-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 65m @ VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D

 6.1. Size:277K  diodes
 dmp3098lq.pdf

DMP3098LSS DMP3098LSS

DMP3098LQP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceIDV(BR)DSS RDS(on) max Low Gate Threshold Voltage TA = +25C 70m@ VGS = -10V -3.8A Low Input Capacitance -30V 120m@ VGS = -4.5V -3.0A Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) H

 6.2. Size:229K  diodes
 dmp3098ldm.pdf

DMP3098LSS DMP3098LSS

DMP3098LDMP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low RDS(ON): Case: SOT-26 Case Material - Molded Plastic. UL Flammability Rating 94V-0 65m @VGS = -10V Moisture Sensitivity: Level 1 per J-STD-020D 115m @VGS = -4.5V Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Low Input/Output Leakage Method 208 Lead F

 6.3. Size:100K  diodes
 dmp3098l.pdf

DMP3098LSS DMP3098LSS

DMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT-2370m @ VGS = -10V, ID = -3.8A Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120m @ VGS = -4.5V, ID = -3.0A Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Fi

 6.4. Size:83K  tysemi
 dmp3098l.pdf

DMP3098LSS DMP3098LSS

Product specificationDMP3098LP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Gate Threshold Voltage V(BR)DSS RDS(on) maxTA = 25C Low Input Capacitance Fast Switching Speed 70m@ VGS = -10V -3.8A Low Input/Output Leakage -30V 120m@ VGS =-4.5V -3.0A Lead Free By Design/RoHS Compliant (Note 1)

 6.5. Size:280K  cn shikues
 dmp3098l.pdf

DMP3098LSS DMP3098LSS

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -30V/-3.8A, RDS(ON) =55m(MAX) @VGS = -10V.10V. RDS(ON) = 70m(MAX) @VGS = -4.5V.4.5V. RDS(ON) =120m(MAX) @VGS = -2.5V.2.5V. Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package

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