ZXMP3A17DN8 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMP3A17DN8
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
Qg ⓘ - Общий заряд затвора: 8.28 nC
Cossⓘ - Выходная емкость: 630 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: SO8
Аналог (замена) для ZXMP3A17DN8
ZXMP3A17DN8 Datasheet (PDF)
zxmp3a17dn8.pdf

ZXMP3A17DN8DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES Low on-resistan
zxmp3a17e6.pdf

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE
zxmp3a17e6ta.pdf

ZXMP3A17E6ADVANCE INFORMATION30V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -30V; RDS(ON) = 0.07 ID = -4.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.SOT23-6FEATURE
zxmp3a16gta.pdf

A Product Line ofDiodes IncorporatedZXMP3A16G30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Low threshold(Notes 3) Low gate drive 45m @ VGS = -10V -7.5A Green component. Lead Free Finish / RoHS compliant -30V (Note 1) 70m @ VGS
Другие MOSFET... ZXM61P03F , ZXM64P03X , ZXM66P03N8 , ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , 2N60 , ZXMP3A17E6 , ZXMP3F30FH , ZXMP3F35N8 , ZXMP3F36N8 , ZXMP3F37DN8 , ZXMP3F37N8 , BSS84(Z) , BSS84DW .



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