Справочник MOSFET. ZXMP3F35N8

 

ZXMP3F35N8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMP3F35N8
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17.1 A
   Cossⓘ - Выходная емкость: 4600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

ZXMP3F35N8 Datasheet (PDF)

 ..1. Size:244K  diodes
zxmp3f35n8.pdfpdf_icon

ZXMP3F35N8

ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.012 @ VGS=-10V -17.10.018 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application

 7.1. Size:247K  diodes
zxmp3f36n8.pdfpdf_icon

ZXMP3F35N8

ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) () ID(A) -30 0.020 @ VGS=-10V -12.60.028 @ VGS=-4.5VDescription This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance SO8 package Applications B

 7.2. Size:210K  tysemi
zxmp3f30fh zxmp3f30fhta.pdfpdf_icon

ZXMP3F35N8

Product specificationZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) () ID (A) 0.080 @ VGS= -10V -4.0-30 0.140 @ VGS= -4.5VDescription This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features Low on-resistance Fast swi

 7.3. Size:1473K  cn vbsemi
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ZXMP3F35N8

ZXMP3F30FHwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-

Другие MOSFET... ZXMD63P03X , ZXMP3A13F , ZXMP3A16DN8 , ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 , ZXMP3A17E6 , ZXMP3F30FH , IRFB31N20D , ZXMP3F36N8 , ZXMP3F37DN8 , ZXMP3F37N8 , BSS84(Z) , BSS84DW , BSS84V , BSS84W , DMP4050SSD .

History: TK3A60DA | BSS214NW | APL602J

 

 
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