Справочник MOSFET. ZXMP6A17G

 

ZXMP6A17G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP6A17G
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 3.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 1 V
   Максимально допустимый постоянный ток стока |Id|: 4.1 A
   Общий заряд затвора (Qg): 9 nC
   Выходная емкость (Cd): 637 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.19 Ohm
   Тип корпуса: SOT223

 Аналог (замена) для ZXMP6A17G

 

 

ZXMP6A17G Datasheet (PDF)

 ..1. Size:635K  diodes
zxmp6a17g zxmp6a17gta.pdf

ZXMP6A17G ZXMP6A17G

A Product Line ofDiodes IncorporatedZXMP6A17G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 125m @ VGS= -10V -4.3A Green component and RoHS compliant (Note 1) -60V Qualified to AEC-Q101 Standards for High Reliability 190m

 ..2. Size:467K  diodes
zxmp6a17g.pdf

ZXMP6A17G ZXMP6A17G

ZXMP6A17G Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed BVDSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 0.1. Size:216K  diodes
zxmp6a17gq.pdf

ZXMP6A17G ZXMP6A17G

ZXMP6A17GQ Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Quali

 6.1. Size:665K  diodes
zxmp6a17e6 zxmp6a17e6ta.pdf

ZXMP6A17G ZXMP6A17G

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

 6.2. Size:170K  diodes
zxmp6a17dn8.pdf

ZXMP6A17G ZXMP6A17G

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

 6.3. Size:684K  diodes
zxmp6a17k.pdf

ZXMP6A17G ZXMP6A17G

A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A

 6.4. Size:681K  diodes
zxmp6a17ktc.pdf

ZXMP6A17G ZXMP6A17G

A Product Line ofDiodes IncorporatedZXMP6A17K60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS= -10V -6.6A -60V 190m @ VGS= -4.5V -5.3A

 6.5. Size:667K  diodes
zxmp6a17n8 zxmp6a17n8tc.pdf

ZXMP6A17G ZXMP6A17G

A Product Line ofDiodes IncorporatedZXMP6A17N860V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25C Green component and RoHS compliant (Note 1) 125m @ VGS = -10V -3.4A Qualified to AEC-Q101 Standards for High Reliability -60V 190m @ VGS = -4.5V -2

 6.6. Size:493K  diodes
zxmp6a17e6q.pdf

ZXMP6A17G ZXMP6A17G

ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 6.7. Size:542K  diodes
zxmp6a17e6.pdf

ZXMP6A17G ZXMP6A17G

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

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