Справочник MOSFET. ZXMP7A17K

 

ZXMP7A17K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP7A17K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 9.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 70 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.7 A
   Qgⓘ - Общий заряд затвора: 9.6 nC
   Cossⓘ - Выходная емкость: 635 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для ZXMP7A17K

 

 

ZXMP7A17K Datasheet (PDF)

 ..1. Size:532K  diodes
 zxmp7a17k.pdf

ZXMP7A17K ZXMP7A17K

ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

 0.1. Size:529K  zetex
 zxmp7a17ktc.pdf

ZXMP7A17K ZXMP7A17K

ZXMP7A17K70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=5.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

 6.1. Size:428K  diodes
 zxmp7a17g.pdf

ZXMP7A17K ZXMP7A17K

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

 6.2. Size:662K  diodes
 zxmp7a17gq.pdf

ZXMP7A17K ZXMP7A17K

ZXMP7A17GQ Green70V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID 100% Unclamped Inductive Switch (UIS) Test in Production V(BR)DSS RDS(on) TA = +25C Low On-Resistance Fast Switching Speed 160m @ VGS= -10V -2.6A -70V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 250m @ VGS= -4.5V -1.6A Halogen and Antimony Free.

 6.3. Size:426K  zetex
 zxmp7a17gta.pdf

ZXMP7A17K ZXMP7A17K

ZXMP7A17G70V P-channel enhancement mode MOSFETSummary VDSS=70V : RDS(on)=0.16 ID=3.7A DescriptionThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltagepower management applications.FeaturesD Low on-resistanceG Fas

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