ZXMP10A18G - описание и поиск аналогов

ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V RDS(on) = 0.150 ; ID = - 3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-r

A Product Line of Diodes Incorporated ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID max Fast switching speed V(BR)DSS RDS(on) max TA = 25 C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability

ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on

ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on

ZXMP10A18K www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Swit