ZXMP10A18G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZXMP10A18G
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 3.9 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 3.7 A
Общий заряд затвора (Qg): 26.9 nC
Выходная емкость (Cd): 1055 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.15 Ohm
Тип корпуса: SOT223
Аналог (замена) для ZXMP10A18G
ZXMP10A18G Datasheet (PDF)
zxmp10a18g.pdf
ZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = - 100V : RDS(on) = 0.150 ; ID = - 3.7ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage, power management applications.FEATURESSOT223 Low on-r
zxmp10a18gta.pdf
A Product Line ofDiodes IncorporatedZXMP10A18G100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID max Fast switching speed V(BR)DSS RDS(on) max TA = 25C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability
zxmp10a18k.pdf
ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on
zxmp10a18ktc.pdf
ZXMP10A18K100V DPAK P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.150 @ VGS= -10V -5.9-1000.190 @ VGS= -6V -5.2DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastGswitching, making it ideal for high efficiency power managementapplications.FeaturesS Low on
zxmp10a18k.pdf
ZXMP10A18Kwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Swit
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