DMC2020USD - описание и поиск аналогов

A Product Line of Diodes Incorporated DMC2020USD 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 ID Max Low gate drive Device V(BR)DSS RDS(on) max TA = 25 C Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m @ VGS = 4.5V 8.

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20201 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Device V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 35m @ VGS = 4.5V 4.5A Q1 20V Low Input/Output Leakage 56m @ VGS = 1.8V 3.5A Fast Switching Speed 74m @ VGS = -4.5V 3.1A Q2 -20V Totally Lead-Free & Fully RoHS

DMC2004DWK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-363 Low Gate Threshold Voltage VGS(th)

DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25 C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4

DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m

DMC2004LPK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case DFN1612-6 Low Gate Threshold Voltage VGS(th)

DMC2004VK COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-563 Low Gate Threshold Voltage VGS(th)

This product complies with the RoHS Directive (EU 2002/95/EC). DMC206E2 Silicon NPN epitaxial planar type For high-frequency amplification DMC506E2 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter (

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20501 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC). DMC204A0 Silicon NPN epitaxial planar type For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter (Tr1) 4 E

This product complies with the RoHS Directive (EU 2002/95/EC). DMC205E0 Silicon NPN epitaxial planar type For High frequency amplification DMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20401 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20601 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC). DMC201A0 Silicon NPN epitaxial planar type For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Coll

This product complies with the RoHS Directive (EU 2002/95/EC). DMC205C0 Silicon NPN epitaxial planar type For low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20101 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC). DMC204B3 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC). DMC204C0 Silicon NPN epitaxial planar type For low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC). DMC20402 Silicon NPN epitaxial planar type For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1 Emitter (

This product complies with the RoHS Directive (EU 2002/95/EC). DMC201E0 Silicon NPN epitaxial planar type For High frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Collector (Tr2) Ba

DMC2038LVT-7-F www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.08