Справочник MOSFET. DMC3018LSD

 

DMC3018LSD Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DMC3018LSD
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.1 A
   Qgⓘ - Общий заряд затвора: 12.4 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

DMC3018LSD Datasheet (PDF)

 ..1. Size:179K  diodes
dmc3018lsd.pdfpdf_icon

DMC3018LSD

DMC3018LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFET Case: SO-8 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 20m @ 10V Moisture Sensitivity: Level 1 per J-STD-020 32m @ 4.5V Terminals Connections: See Diag

 0.1. Size:1031K  cn vbsemi
dmc3018lsd-13.pdfpdf_icon

DMC3018LSD

DMC3018LSD-13www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a

 8.1. Size:464K  diodes
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DMC3018LSD

DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance Device V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 16m @ VGS = 10V 8.2A Q2 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 7.3A Halogen and Antimony Free. Green Device (Not

 9.1. Size:446K  fairchild semi
fdmc3020dc.pdfpdf_icon

DMC3018LSD

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

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History: QM2413V | HCD70R910 | PJC138K | NCEA65NF036T | SFF20N60N | LSDN65R950HT | BRCS200P03DSC

 

 
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