DMC3028LSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMC3028LSD
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.1 A
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: SO8
Аналог (замена) для DMC3028LSD
DMC3028LSD Datasheet (PDF)
dmc3028lsd.pdf
A Product Line ofDiodes IncorporatedDMC3028LSD30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V45m @ VGS=
dmc3028lsdx.pdf
DMC3028LSDX Electrical Characteristics Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS
fdmc3020dc.pdf
October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a
dmc3021lsd.pdf
DMC3021LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 21m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti
dmc3025lsd.pdf
DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max Package Low Input Capacitance TA = +25C Fast Switching Speed 20m @ VGS = 10V 8.5A N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m @ VGS = 4.5V SO-8 Halogen and Antimony Free. Gr
dmc3021lsdq.pdf
DMC3021LSDQCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceDevice V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully
dmc3021lk4.pdf
DMC3021LK4COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog
Другие MOSFET... DMC2004LPK , DMC2004VK , DMC2020USD , DMG1016UDW , DMG1016V , DMC3018LSD , DMC3021LK4 , DMC3021LSD , IRF630 , DMC3032LSD , DMC3036LSD , DMG6602SVT , ZXMC3A16DN8 , ZXMC3A17DN8 , ZXMC3A18DN8 , ZXMC3AMC , ZXMC3F31DN8 .
Список транзисторов
Обновления
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