DMG6602SVT - аналоги, параметры транзистора - Справочник транзисторов

DMG6602SVT даташит

..1. Size:506K diodes
dmg6602svt.pdf pdf_icon

DMG6602SVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Anti

0.1. Size:511K diodes
dmg6602svtq.pdf pdf_icon

DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(on) Low Input Capacitance TA = +25 C Fast Switching Speed 60m @ VGS = 10V 3.4A Low Input/Output Leakage Q1 30V 100m @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antim

6.1. Size:1546K cn vbsemi
dmg6602s.pdf pdf_icon

DMG6602S www.VBsemi.tw N- and P-Channel 2 V (D-S) MOSFET 0 FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFET N-Channel 20 0.036 at VGS = 4.5 V 4.2 100 % Rg Tested 0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.083 at V

8.1. Size:382K diodes
dmg6601lvt.pdf pdf_icon

DMG6601LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID max Complementary MOSFET Device V(BR)DSS RDS(ON) max Package TA = +25 C Low On-Resistance Low Input Capacitance 55m @ VGS = 10V TSOT26 3.8A Q1 30V Fast Switching Speed 65m @ VGS = 4.5V TSOT26 3.6A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 110m @ VGS =

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