Справочник MOSFET. ZXMC3A17DN8

 

ZXMC3A17DN8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMC3A17DN8
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.4 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

ZXMC3A17DN8 Datasheet (PDF)

 ..1. Size:280K  diodes
zxmc3a17dn8.pdfpdf_icon

ZXMC3A17DN8

ZXMC3A17DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4AP-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltag

 7.1. Size:686K  diodes
zxmc3a18dn8.pdfpdf_icon

ZXMC3A17DN8

ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef

 7.2. Size:312K  diodes
zxmc3a16dn8.pdfpdf_icon

ZXMC3A17DN8

ZXMC3A16DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,

 8.1. Size:731K  diodes
zxmc3amc.pdfpdf_icon

ZXMC3A17DN8

A Product Line ofDiodes IncorporatedZXMC3AMC30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

Другие MOSFET... DMC3018LSD , DMC3021LK4 , DMC3021LSD , DMC3028LSD , DMC3032LSD , DMC3036LSD , DMG6602SVT , ZXMC3A16DN8 , 2SK3878 , ZXMC3A18DN8 , ZXMC3AMC , ZXMC3F31DN8 , ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD , DMC4050SSD .

History: 2SJ484 | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2

 

 
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