ZXMC3AMC - описание и поиск аналогов

 

ZXMC3AMC. Аналоги и основные параметры

Наименование производителя: ZXMC3AMC

Тип транзистора: MOSFET

Полярность: NP

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.45 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.7 A

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: WDFN30208

Аналог (замена) для ZXMC3AMC

- подборⓘ MOSFET транзистора по параметрам

 

ZXMC3AMC даташит

 ..1. Size:731K  diodes
zxmc3amc.pdfpdf_icon

ZXMC3AMC

A Product Line of Diodes Incorporated ZXMC3AMC 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low R JA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

 7.1. Size:724K  diodes
zxmc3am832.pdfpdf_icon

ZXMC3AMC

OBSOLETE- PLEASE USE ZXMC3AMCTA ZXMC3AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique stru

 8.1. Size:686K  diodes
zxmc3a18dn8.pdfpdf_icon

ZXMC3AMC

ZXMC3A18DN8 Complementary 30V enhancement mode MOSFET Summary N-Channel = V(BR)DSS= 30V RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V RDS(on)= 0.035 ; ID= -6.3A Description D1 D2 This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes G1 G2 them ideal for high ef

 8.2. Size:280K  diodes
zxmc3a17dn8.pdfpdf_icon

ZXMC3AMC

ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS= 30V RDS(on)= 0.050 ; ID= 5.4A P-Channel V(BR)DSS= -30V RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltag

Другие MOSFET... DMC3021LSD , DMC3028LSD , DMC3032LSD , DMC3036LSD , DMG6602SVT , ZXMC3A16DN8 , ZXMC3A17DN8 , ZXMC3A18DN8 , IRF9540 , ZXMC3F31DN8 , ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD , DMC4050SSD , ZXMC10A816N8 , ZXMC4559DN8 .

 

 

 

 

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