BSP75G - описание и поиск аналогов

BSP75G 60V self-protected low-side IntelliFETTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 550m SOT223 Nominal load current 1.4A (VIN = 5V) Clamping energy 550mJ Description S Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level D D power MOSFET intended as a ge

BSP75GQ 60V SELF-PROTECTED LOW-SIDE INTELLIFET MOSFET SWITCH Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Short Circuit Protection with Auto Restart On-State Resistance 550m Over Voltage Protection (Active Clamp) Nominal Load Current (VIN = 5V) 1.4A Thermal Shutdown with Auto Restart Clamping Energy 550mJ

Target data sheet BSP 752 T Smart Power High-Side-Switch Features Product Summary Overvoltage protection 60 V Overload protection Vbb(AZ) Current limitation Operating voltage 5...34 V Vbb(on) On-state resistance 200 Short circuit protection RON m Nominal load current 1.3 A Thermal shutdown with restart IL(nom) Overvoltage protection (including load dump)

HITFET BSP 75 Smart Lowside Power Switch Features Product Summary Logic Level Input Continuous drain source voltage V 55 V DS Input protection (ESD) On-state resistance R 550 DS(ON) m Thermal shutdown (with restart) Current limitation I 1 A D(lim) Overload protection Nominal load current I 0.7 A D(Nom) Short circuit protection Clamping energy E 550 mJ A

HITFET BSP 75A Smart Lowside Power Switch Features Product Summary Logic Level Input Continuous drain source voltage V 55 V DS Input protection (ESD) On-state resistance R 550 DS(ON) m Thermal shutdown (with restart) Current limitation I 1 A D(lim) Overload protection Load current (ISO) I 0.7 A D(ISO) Short circuit protection Clamping energy E 550 mJ AS

BSP75N 60V self-protected low-side IntellifetTM MOSFET switch Summary Continuous drain source voltage VDS=60V On-state resistance 500m Maximum nominal load current(a) 1.1A (VIN = 5V) SOT223 Minimum nominal load current(c) 0.7A (VIN = 5V) Clamping energy 550mJ Description S Self-protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD