ZXMS6004FF - Даташиты. Аналоги. Основные параметры

A Product Line ofDiodes IncorporatedZXMS6004FF60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 90mJDescriptionThe ZXMS6004FF is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-v

SMD Type MOSFETTransistorsN-Channel Self Protected Enhancement Mode MOSFETZXMS6004FF(KXMS6004FF) FeaturesSOT-23Unit: mm+0.12.9-0.1 Compact high power dissipation package+0.10.4 -0.1 Low input current3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp)12+0.1+0.050.95-0.1 0.1 -0.01 Therm

ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 90mJ Short Circ

A Product Line ofDiodes IncorporatedZXMS6004DG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 490mJDescriptionThe ZXMS6004DG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

ZXMS6004SGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

A Product Line ofDiodes IncorporatedZXMS6004SG60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 VOn-state resistance 500 mNominal load current (VIN = 5V) 1.3 AClamping energy 480mJDescriptionThe ZXMS6004SG is a self protected low side MOSFET with logic levelinput. It integrates over-temperature, over-current, over-

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

A Product Line ofDiodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 PackageDESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P