Справочник MOSFET. ZXMS6006DT8

 

ZXMS6006DT8 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMS6006DT8
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: SM8
 

 Аналог (замена) для ZXMS6006DT8

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMS6006DT8 Datasheet (PDF)

 ..1. Size:267K  diodes
 zxms6006dt8.pdf pdf_icon

ZXMS6006DT8

A Product Line of Diodes IncorporatedZXMS6006DT8 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A

 0.1. Size:276K  diodes
 zxms6006dt8q.pdf pdf_icon

ZXMS6006DT8

GreenZXMS6006DT8Q60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Cir

 5.1. Size:241K  diodes
 zxms6006dg.pdf pdf_icon

ZXMS6006DT8

A Product Line of Diodes IncorporatedZXMS6006DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos drain source voltage 60V Compact high power dissipation package Low input current On-state resistance 100m Logic Level Input (3.3V and 5V) Nominal load current (VIN = 5V) 2.8A Short

 5.2. Size:340K  diodes
 zxms6006dgq.pdf pdf_icon

ZXMS6006DT8

GreenZXMS6006DGQ60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 100m Low Input Current Nominal Load Current (VIN = 5V) 2.8A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit Pro

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... ZXMS6004DG , ZXMS6004DT8 , ZXMS6004FF , ZXMS6004SG , ZXMS6005DG , ZXMS6005DT8 , ZXMS6005SG , ZXMS6006DG , 10N65 , ZXMS6006SG , ZXMHC10A07N8 , ZXMHC10A07T8 , ZXMHC3A01N8 , ZXMHC3A01T8 , ZXMHC3F381N8 , ZXMHC6A07N8 , ZXMHC6A07T8 .

 

 
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