2SK801. Аналоги и основные параметры
Наименование производителя: 2SK801
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 12 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 150 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO252
Аналог (замена) для 2SK801
- подборⓘ MOSFET транзистора по параметрам
2SK801 даташит
0.1. Size:183K lrc
l2sk801lt1g.pdf 
LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G N Channel SOT 23 3 Pb-Free Package is Available. 1 2 CASE 318, STYLE 21 MAXIMUM RATINGS SOT 23 (TO 236AB) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc 310 mAMPS Drain Current 60 VOLTS Continuous TC = 25 C (Note 1.) ID 3
9.3. Size:141K panasonic
2sk807.pdf 
"2SK807" "2SK807"
9.8. Size:197K inchange semiconductor
2sk805.pdf 
isc N-Channel MOSFET Transistor 2SK805 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM
9.9. Size:197K inchange semiconductor
2sk809a.pdf 
isc N-Channel MOSFET Transistor 2SK809A DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.10. Size:197K inchange semiconductor
2sk807.pdf 
isc N-Channel MOSFET Transistor 2SK807 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.11. Size:201K inchange semiconductor
2sk808a.pdf 
isc N-Channel MOSFET Transistor 2SK808A DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.12. Size:201K inchange semiconductor
2sk806.pdf 
isc N-Channel MOSFET Transistor 2SK806 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.13. Size:199K inchange semiconductor
2sk803.pdf 
isc N-Channel MOSFET Transistor 2SK803 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =160V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160 V DSS GS V Gate-Source
9.14. Size:201K inchange semiconductor
2sk808.pdf 
isc N-Channel MOSFET Transistor 2SK808 DESCRIPTION Drain Current I =1A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
9.15. Size:195K inchange semiconductor
2sk804.pdf 
isc N-Channel MOSFET Transistor 2SK804 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 150
9.16. Size:197K inchange semiconductor
2sk809.pdf 
isc N-Channel MOSFET Transistor 2SK809 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay
Другие IGBT... 2SK701, 2SK702, 2SK703, 2SK705, 2SK724, 2SK738, 2SK739, 2SK799, IRF1010E, 2SK802, 2SK814, 2SK875, 2SK876, 2SK897, 2SK897-MR, 2SK899, 2SK900
