2SK897-MR. Аналоги и основные параметры
Наименование производителя: 2SK897-MR
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
ton ⓘ - Время включения: 65 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для 2SK897-MR
- подборⓘ MOSFET транзистора по параметрам
2SK897-MR даташит
..2. Size:279K inchange semiconductor
2sk897-mr.pdf 

isc N-Channel MOSFET Transistor 2SK897-MR FEATURES Drain Current I = 4.0A@ T =25 D C Drain Source Voltage V = 550V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
6.1. Size:137K fuji
2sk897-m.pdf 

"2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M" Powered by ICminer.com Electronic-Library Service CopyRight 2003
9.4. Size:87K toshiba
2sk890.pdf 

www.DataSheet4U.com
9.6. Size:59K inchange semiconductor
2sk892.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R
9.7. Size:303K inchange semiconductor
2sk895.pdf 

isc N-Channel MOSFET Transistor 2SK895 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.8. Size:234K inchange semiconductor
2sk899.pdf 

isc N-Channel MOSFET Transistor 2SK899 DESCRIPTION Drain Current I =18A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
9.9. Size:288K inchange semiconductor
2sk891.pdf 

isc N-Channel MOSFET Transistor 2SK891 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
9.10. Size:303K inchange semiconductor
2sk896.pdf 

isc N-Channel MOSFET Transistor 2SK896 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
9.11. Size:59K inchange semiconductor
2sk893.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GS V G
9.12. Size:198K inchange semiconductor
2sk894.pdf 

isc N-Channel MOSFET Transistor 2SK894 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vo
Другие MOSFET... 2SK739
, 2SK799
, 2SK801
, 2SK802
, 2SK814
, 2SK875
, 2SK876
, 2SK897
, AON7506
, 2SK899
, 2SK900
, 2SK901
, 2SK902
, 2SK903
, 2SK904
, 2SK905
, 2SK906
.
History: TA17650
| 3SK169P
| 2SK529
| 2SK738
| 2N7271H
| 3SK180-5
| 3SK290