2SK897-MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK897-MR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
tonⓘ - Время включения: 65 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO220F
2SK897-MR Datasheet (PDF)
2sk897-mr.pdf
isc N-Channel MOSFET Transistor 2SK897-MRFEATURESDrain Current : I = 4.0A@ T =25D CDrain Source Voltage: V = 550V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
2sk897-m.pdf
"2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK897M"Powered by ICminer.com Electronic-Library Service CopyRight 2003
2sk892.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK892 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM R
2sk895.pdf
isc N-Channel MOSFET Transistor 2SK895FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk899.pdf
isc N-Channel MOSFET Transistor 2SK899DESCRIPTIONDrain Current I =18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sk891.pdf
isc N-Channel MOSFET Transistor 2SK891FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk896.pdf
isc N-Channel MOSFET Transistor 2SK896FEATURESDrain Current : I = 12A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk893.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK893 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS High voltage. high speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 500 V DSS GSV G
2sk894.pdf
isc N-Channel MOSFET Transistor 2SK894DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage.high speed power Switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo
Другие MOSFET... 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , 2SK875 , 2SK876 , 2SK897 , IRFZ24N , 2SK899 , 2SK900 , 2SK901 , 2SK902 , 2SK903 , 2SK904 , 2SK905 , 2SK906 .
Список транзисторов
Обновления
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