2SK900 - описание и поиск аналогов

 ..1. Size:132K  1
 2sk900.pdf 

 ..2. Size:288K  inchange semiconductor
 2sk900.pdf 

isc N-Channel MOSFET Transistor 2SK900 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.1. Size:143K  1
 2sk903.pdf 

Discontinued product. Discontinued product. Discontinued product.

 9.2. Size:168K  1
 2sk904.pdf 

 9.3. Size:132K  1
 2sk905.pdf 

 9.4. Size:136K  1
 2sk906.pdf 

 9.5. Size:183K  fuji
 2sk903mr.pdf 

Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor Downloa

 9.6. Size:131K  fuji
 2sk902.pdf 

 9.7. Size:135K  fuji
 2sk901.pdf 

 9.8. Size:136K  fuji
 2sk903-m.pdf 

"2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003 "2SK903M" Powered by ICminer.com Electronic-Library Service CopyRight 2003

 9.9. Size:286K  inchange semiconductor
 2sk903-mr.pdf 

isc N-Channel MOSFET Transistor 2SK903-MR FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.10. Size:199K  inchange semiconductor
 2sk904.pdf 

isc N-Channel MOSFET Transistor 2SK904 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor co

 9.11. Size:203K  inchange semiconductor
 2sk905.pdf 

isc N-Channel MOSFET Transistor 2SK905 DESCRIPTION Drain Current I =45A@ T =25 D C Drain Source Voltage- V =50V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltag

 9.12. Size:203K  inchange semiconductor
 2sk906.pdf 

isc N-Channel MOSFET Transistor 2SK906 DESCRIPTION Drain Current I =32A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for low voltage. high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta

 9.13. Size:202K  inchange semiconductor
 2sk902.pdf 

isc N-Channel MOSFET Transistor 2SK902 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V

 9.14. Size:285K  inchange semiconductor
 2sk901.pdf 

isc N-Channel MOSFET Transistor 2SK901 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi