CPH6341 datasheet, аналоги, основные параметры
Наименование производителя: CPH6341 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 105 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.059 Ohm
Тип корпуса: CPH6
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Аналог (замена) для CPH6341
- подборⓘ MOSFET транзистора по параметрам
CPH6341 даташит
..1. Size:64K sanyo
cph6341.pdf 
Ordering number ENA1084 CPH6341 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6341 Applications Features Low ON-resistance. High-speed switching. 4V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V D
8.1. Size:315K sanyo
cph6347.pdf 
CPH6347 Ordering number ENA1334A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6347 Applications Features 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC
8.2. Size:391K onsemi
cph6347.pdf 
CPH6347 Power MOSFET www.onsemi.com 20V, 39m , 6A, Single P-Channel VDSS RDS(on) Max ID Max Features 39m @ -4.5V Low Gate Drive Voltage -20V 66m @ -2.5V -6A ESD Diode-Protected Gate 102m @ -1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection Absolute Maximum Ratings at Ta = 25 C P-Channel Unit Parameter S
9.1. Size:410K 1
cph6354.pdf 
CPH6354 Ordering number ENA1946 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6354 Applications Features ON-resistance RDS(on)1=77m (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VD
9.2. Size:401K sanyo
cph6355.pdf 
CPH6355 Ordering number EN8933 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6355 Applications Features ON-resistance RDS(on)1=130m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour
9.3. Size:29K sanyo
cph6313.pdf 
Ordering number ENN7017 CPH6313 P-Channel Silicon MOSFET CPH6313 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 2.5V drive. [CPH6315] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at
9.4. Size:29K sanyo
cph6304.pdf 
Ordering number ENN6917 CPH6304 P-Channel Silicon MOSFET CPH6304 High-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 4V drive. [CPH6304] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum R
9.5. Size:30K sanyo
cph6319.pdf 
Ordering number ENN7182 CPH6319 P-Channel Silicon MOSFET CPH6319 High-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 1.8V drive. [CPH6319] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum
9.7. Size:28K sanyo
cph6315.pdf 
Ordering number ENN7018 CPH6315 P-Channel Silicon MOSFET CPH6315 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 2.5V drive. [CPH6315] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at
9.8. Size:199K sanyo
cph6302.pdf 
Ordering number EN5939 P-Channel MOS Silicon FET CPH6302 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151 4V drive. [CPH6302] 0.15 2.9 6 5 4 0 to 0.1 1 Drain 1 2 3 2 Drain 0.95 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at T
9.9. Size:42K sanyo
cph6306.pdf 
Ordering number ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151A 4V drive. [CPH6306] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain SANYO CPH6 Specifications Absolute Maximum Ratings at Ta =
9.10. Size:217K sanyo
cph6301.pdf 
Ordering number EN5938 P-Channel MOS Silicon FET CPH6301 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151 2.5V drive. [CPH6301] 0.15 2.9 6 5 4 0 to 0.1 1 Drain 1 2 3 2 Drain 0.95 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at
9.11. Size:29K sanyo
cph6351.pdf 
Ordering number ENN6936 CPH6351 P-Channel Silicon MOSFET CPH6351 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6351] 0.15 2.9 5 6 4 0.05 1 Drain 2 Drain 1 2 3 3 Gate 0.95 4 Source 5 Drain 6 Drain Specifications 0.4 SANYO CPH6 Absolu
9.12. Size:29K sanyo
cph6352.pdf 
Ordering number ENN6937 CPH6352 P-Channel Silicon MOSFET CPH6352 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6352] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolu
9.13. Size:287K sanyo
cph6350.pdf 
CPH6350 Ordering number ENA1529 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6350 Applications Features 4V drive. Low ON-resistance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID --
9.14. Size:41K sanyo
cph6303.pdf 
Ordering number ENN6395A P-Channel Silicon MOSFET CPH6303 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2151A 2.5V drive. [CPH6303] 0.15 2.9 6 5 4 0.05 1 2 3 1 Drain 0.95 2 Drain 3 Gate 4 Source 5 Drain 6 Drain 0.4 SANYO CPH6 Specifications Absolute Maximum Ratings at T
9.15. Size:265K sanyo
cph6337.pdf 
Ordering number ENA0923 CPH6337 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device CPH6337 Applications Features Ultrahigh-speed switching. 1.8V drive Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC)
9.16. Size:29K sanyo
cph6318.pdf 
Ordering number ENN7212 CPH6318 P-Channel Silicon MOSFET CPH6318 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 1.8V drive. [CPH6318] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at T
9.17. Size:29K sanyo
cph6316.pdf 
Ordering number ENN7026 CPH6316 P-Channel Silicon MOSFET CPH6316 High-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 4V drive. [CPH6316] 0.15 2.9 5 6 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications SANYO CPH6 Absolute Maximum Ratings at Ta
9.18. Size:30K sanyo
cph6312.pdf 
Ordering number ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm High-speed switching. 2151A 4V drive. [CPH6312] 0.15 2.9 6 5 4 0.05 1 2 3 0.95 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 0.4 6 Drain Specifications Absolute Maximum Ratings at Ta=2
9.19. Size:293K onsemi
cph6350.pdf 
Ordering number ENA1529B CPH6350 P-Channel Power MOSFET http //onsemi.com 30V, 6A, 43m , Single CPH6 Features 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS --30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID --6 A Drain
Другие IGBT... CPH3448, CPH3455, CPH3456, CPH3457, CPH5901, CPH5902, CPH5905, CPH6337, HY1906P, CPH6347, CPH6350, CPH6442, CPH6443, CPH6444, CPH6445, EC3A03B, EC3A04B
