ECH8315 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ECH8315
Маркировка: JS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18 nC
trⓘ - Время нарастания: 33 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: ECH8
ECH8315 Datasheet (PDF)
ech8315.pdf
ECH8315Ordering number : ENA1387SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8315ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS
ech8310.pdf
ECH8310Ordering number : ENA1430SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8310ApplicationsFeatures 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)
ech8320.pdf
ECH8320Ordering number : ENA1429SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8320ApplicationsFeatures Low ON-resistance. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS
ech8302.pdf
Ordering number : ENN8247ECH8302P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8302ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --7 ADrain Current (Pulse) IDP PW
ech8304.pdf
Ordering number : ENN8255ECH8304P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8304ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 9 VDrain Current (DC) ID
ech8305.pdf
Ordering number : ENN8145 ECH8305P-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8305ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --4 ADrain Current (Pulse) IDP PW1
ech8306.pdf
Ordering number : ENA0302 ECH8306SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8306ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --2
ech8309.pdf
ECH8309Ordering number : ENA1418ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8309ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (
ech8308.pdf
Ordering number : ENA1182ECH8308SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8308ApplicationsFeatures Best suited for load switching. Low ON-resistance. 1.8V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -
ech8309.pdf
Ordering number : ENA1418BECH8309P-Channel Power MOSFEThttp://onsemi.com 12V, 9.5A, 16m , Single ECH8Features 1.8V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --9
Другие MOSFET... CPH6444 , CPH6445 , EC3A03B , EC3A04B , EC4401C , ECH8308 , ECH8309 , ECH8310 , SKD502T , ECH8320 , ECH8410 , ECH8419 , ECH8601M , ECH8602M , ECH8649 , ECH8651R , ECH8652 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918