ECH8601M - описание и поиск аналогов

Ordering number ENA1174 ECH8601M SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8601M Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

ECH8602M Ordering number ENA1562 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8602M Applications Features 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain

Ordering number ENN7218 ECH8603 P-Channel Silicon MOSFET ECH8603 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2206 2.5V drive. [ECH8603] Bottom View Side View 0.3 0.15 5 6 7 8 4 3 2 1 0.65 1 Source1 2.9 Top View 2 Gate1 3 Source2 8 7 6 5 4 Gate2 Side View 5 Dr

ECH8673 Ordering number ENA1892 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8673 Applications Features ON-resistance Nch RDS(on)1=65m (typ.), Pch ON-resistance RDS(on)1=125m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications at Ta=25 C Absolute Maximum Ratings Paramet

Ordering number ENA1185 ECH8664R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8664R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

ECH8674 Ordering number ENA1436 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8674 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --1

Ordering number ENA0981 ECH8654 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8654 Applications Features Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS

ECH8659 Ordering number ENA1224A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8659 Applications Features 4V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-So

ECH8660 Ordering number ENA1358B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8660 Applications Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free compliance Spe

Ordering number ENA0854 ECH8649 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8649 Applications Features Low ON-resistance. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions

Ordering number ENA0851 ECH8653 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8653 Applications Features Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ra

Ordering number ENA1010 ECH8651R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8651R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

Ordering number ENA1011 ECH8655R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8655R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

ECH8667 Ordering number ENA1778 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8667 Applications Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Sour

ECH8661 Ordering number ENA1777 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8661 Applications Features ON-resistance Nch RDS(on)1=18m (typ.), Pch ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi

ECH8675 Ordering number ENA1437 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8675 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2

ECH8657 Ordering number ENA1710A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8657 Applications Features 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID

ECH8671 Ordering number ENA1456 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8671 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --1

ECH8668 Ordering number ENA1510 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device ECH8668 Applications Features The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.

Ordering number ENA1184 ECH8663R SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8663R Applications Features Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance. Specifications Absolute Maximum Ratings

Ordering number ENA1259 ECH8662 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8662 Applications Features Low ON-resistance. 2.5V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS 10

ECH8672 Ordering number ENA1465 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8672 Applications Features 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --2

Ordering number ENA0935 ECH8652 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device ECH8652 Applications Features Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-S

ECH8656 Ordering number EN9010 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ECH8656 Applications Features ON-resistance RDS(on)1=13m (typ.) 1.8V drive Halogen free compliance Nch + Nch MOSFET Protection diode in Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit

Ordering number ENA2185B ECH8690 Power MOSFET http //onsemi.com 60V, 4.7A, 55m -60V, -3.5A, 94m Complememtary Dual ECH8 Features On-State Resistance Nch RDS(on)1=42m (typ.) Protection diode in Pch RDS(on)1=73m (typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condit

Ordering number ENA2243 ECH8697R N-Channel Power MOSFET http //onsemi.com 24V, 10A, 11.6m , Dual ECH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-Drain Type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at T

Ordering number ENA1010A ECH8651R N-Channel Power MOSFET http //onsemi.com 24V, 10A, 14m , Dual ECH8 Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parame

Ordering number ENA2208A ECH8693R N-Channel Power MOSFET http //onsemi.com 24V, 14A, 7m , Dual ECH8 Common Drain Features Low ON-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25

Ordering number ENA1778A ECH8667 P-Channel Power MOSFET http //onsemi.com 30V, 5.5A, 39m , Dual ECH8 Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltag

Ordering number ENA1777A ECH8661 Power MOSFET http //onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8 Features ON-resistance Nch RDS(on)1=18m (typ.), Pch ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig

Ordering number ENA1710B ECH8657 N-Channel Power MOSFET http //onsemi.com 35V, 4.5A, 59m , Dual ECH8 Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4.5 A Drain Curre

Ordering number ENA1510A ECH8668 Power MOSFET http //onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8 Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode in Sp

Ordering number ENA2314A ECH8695R N-Channel Power MOSFET http //onsemi.com 24V, 11A, 9.1m , Dual ECH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings