ECH8662 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ECH8662
Маркировка: TH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 12 nC
trⓘ - Время нарастания: 34 ns
Cossⓘ - Выходная емкость: 77 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.03 Ohm
Тип корпуса: ECH8
ECH8662 Datasheet (PDF)
ech8662.pdf
Ordering number : ENA1259 ECH8662SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8662ApplicationsFeatures Low ON-resistance. 2.5V drive. Halogen free compliance.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 40 VGate-to-Source Voltage VGSS 10
ech8664r.pdf
Ordering number : ENA1185 ECH8664RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8664RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8660.pdf
ECH8660Ordering number : ENA1358BSANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8660ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 4V drive Halogen free complianceSpe
ech8667.pdf
ECH8667Ordering number : ENA1778SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8667ApplicationsFeatures ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour
ech8661.pdf
ECH8661Ordering number : ENA1777SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8661ApplicationsFeatures ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switchi
ech8668.pdf
ECH8668Ordering number : ENA1510SANYO SemiconductorsDATA SHEETN-Channel and P-Channel Silicon MOSFETsGeneral-Purpose Switching DeviceECH8668ApplicationsFeatures The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting. 1.8V drive. Halogen free compliance.
ech8663r.pdf
Ordering number : ENA1184 ECH8663RSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8663RApplicationsFeatures Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Halogen free compliance.SpecificationsAbsolute Maximum Ratings
ech8667.pdf
Ordering number : ENA1778AECH8667P-Channel Power MOSFEThttp://onsemi.com 30V, 5.5A, 39m , Dual ECH8Features ON-resistance RDS(on)1=30m (typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltag
ech8661.pdf
Ordering number : ENA1777AECH8661Power MOSFEThttp://onsemi.com 30V, 7A, 24m , 30V, 5.5A, 39m , Complementary Dual ECH8Features ON-resistance Nch: RDS(on)1=18m (typ.), Pch: ON-resistance RDS(on)1=30m (typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg hig
ech8668.pdf
Ordering number : ENA1510AECH8668Power MOSFEThttp://onsemi.com 20V, 7.5A, 17m , 20V, 5A, 38m , Complementary Dual ECH8Features The ECH8668 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting 1.8V drive Halogen free compliance Protection diode inSp
Другие MOSFET... ECH8652 , ECH8653 , ECH8654 , ECH8655R , ECH8657 , ECH8659 , ECH8660 , ECH8661 , IRF3205 , ECH8663R , ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918