MCH3484 - описание и поиск аналогов

MCH3484 Ordering number ENA1883 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3484 Applications Features ON-resistance RDS(on)1=33m (typ.) 0.9V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Sou

MCH3486 Power MOSFET www.onsemi.com 60V, 137m , 2A, Single N-Channel Features VDSS RDS(on) Max ID Max VDSS RDS(on) Max ID Max 137 m @10V Low RDS(on) 137 m @10V 60V 2A 60V 2A 192 m @4.5V 192 m @4.5V 4V Drive 217 m @4V 217 m @4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Small Surface Mount Package (MCPH3) Electric

MCH3481 Power MOSFET 20V, 104m , 2A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-Resis

MCH3476 Ordering number ENA1952 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3476 Applications Features 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID

Ordering number ENN7997 MCH3421 N-Channel Silicon MOSFET General-Purpose Switching Device MCH3421 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 0.8 A D

Ordering number ENN7746 MCH3427 N-Channel Silicon MOSFET General-Purpose Switching Device MCH3427 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) ID 4 A Dr

Ordering number ENA1260 MCH3477 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3477 General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) I

Ordering number ENN7010 MCH3406 N-Channel Silicon MOSFET MCH3406 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2167A 1.8V drive. [MCH3406] 0.3 0.15 3 2 1 0.65 2.0 3 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications 1 2 Absolute Maximum Ratings at Ta=25 C Parameter S

Ordering number ENA1000 MCH3475 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3475 General-Purpose Switching Device Applications Features Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID

Ordering number ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 4V drive. [MCH3410] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions R

MCH3479 Ordering number ENA1813 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3479 Applications Features ON-resistance RDS(on)1=49m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Sou

Ordering number ENN6940 MCH3405 N-Channel Silicon MOSFET MCH3405 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 1.8V drive. [MCH3405] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions

Ordering number ENN6443 N-Channel Silicon MOSFET MCH3401 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2167 2.5V drive. [MCH3401] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings

Ordering number ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resinstance. unit mm Ultrahigh-speed switching. 2167 4V drive. [MCH3412] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions

Ordering number ENN7011 MCH3408 N-Channel Silicon MOSFET MCH3408 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167A 4V drive. [MCH3408] 0.3 0.15 3 2 1 0.65 2.0 3 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 1 2 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Con

Ordering number ENN6911 MCH3409 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2167 2.5V drive. [MCH3409] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain Specifications SANYO MCPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symb

Ordering number ENN6444 N-Channel Silicon MOSFET MCH3402 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed swithcing. 2167 4V drive. [MCH3402] 0.3 0.15 3 1 2 0.65 2.0 1 Gate 2 Source 3 Drain SANYO MCPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Un

MCH3478 Ordering number ENA1353 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3478 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V

MCH3474 Ordering number ENA1397 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH3474 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

MCH3477 Power MOSFET www.onsemi.com 20V, 38m , 4.5A, Single N-Channel VDSS RDS(on) Max ID Max Features 38 m @4.5V High Speed Switching 20V 61 m @2.5V 4.5A 1.8V Drive 99 m @1.8V ESD Diode - Protected Gate Low On-Resistance Pb-Free, Halogen Free and RoHS Compliance Electrical Connection N-Channel Specifications 3 Absolute Maximum R

MCH3476 Power MOSFET www.onsemi.com 20V, 125m , 2A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 125m @ 4.5V 1.8V Drive 20V 190m @ 2.5V 2A ESD Diode-Protected Gate 310m @ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Sym

MCH3475 Power MOSFET www.onsemi.com 30V, 180m , 1.8A, Single N-Channel Features VDSS RDS(on) Max ID Max High Speed Switching 180m @ 10V 4V Drive 30V 1.8A 330m @ 4V Pb-Free and RoHS Compliance Halogen Free Compliance MCH3475-TL-W Electrical Connection Specifications N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol Valu

MCH3479 Power MOSFET www.onsemi.com 20V, 64m , 3.5A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 64m @ 4.5V 1.8V Drive 20V 95m @ 2.5V 3.5A ESD Diode-Protected Gate 149m @ 1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter S

MCH3474 Power MOSFET 30V, 50m , 4A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max ID

MCH3409-TL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC