Ordering number : ENA0959 MCH6337SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6337ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS

MCH6337 Power MOSFET www.onsemi.com 20V, 49m, 4.5A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching Low Gate Drive Voltage ESD Diode-Protected Gate 1, 2, 5, 6 Pb-Free and RoHS Compliance Halogen Free Compliance : MCH6337-TL-H, MCH6337-TL-W 1:Drain3Specifications 2:Drain3:GateAbsolute

Ordering number : ENA1017 MCH6331SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6331ApplicationsFeatures Low ON-resistance. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --3.5

Ordering number : ENA0958 MCH6336SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6336ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

Ordering number : ENA1272 MCH6341SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6341ApplicationsFeatures Low ON-resistance. 4V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --5 A

Ordering number : ENN7080MCH6307P-Channel Silicon MOSFETMCH6307Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 1.8V drive.[MCH6307]0.30.154 5 63 2 10.65 1 : Drain2 : Drain2.06 5 43 : Gate4 : Source5 : Drain6 : Drain1 2 3 SANYO : MCPH6Specifications

MCH6342Ordering number : ENA1553SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6342ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30

Ordering number : ENA0963 MCH6321SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6321ApplicationsFeatures 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --4 ADrain Current (Pulse)

MCH6344Ordering number : EN8934SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6344ApplicationsFeatures ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Sour

Ordering number : ENN6778MCH6303P-Channel Silicon MOSFETMCH6303Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive.[MCH6303]0.3 0.156 5 41 2 30.651 : Drain2.02 : Drain3 : Gate4 : Source5 : Drain6 : DrainSpecificationsSANYO : MCPH6Absolute Maximum Ratings a

Ordering number : ENN6943MCH6305P-Channel Silicon MOSFETMCH6305Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193 2.5V drive.[MCH6305]0.3 0.156 5 41 2 30.651 : Drain2.0 2 : Drain3 : Gate4 : Source5 : Drain6 : DrainSpecificationsSANYO : MCPH6Absolute Maximum Ratings at

Ordering number : ENA0815 MCH6320SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceMCH6320ApplicationsFeatures Ultrahigh-speed switching. 1.8V driveSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

Ordering number : ENN7132MCH6302P-Channel Silicon MOSFETMCH6302Ultrahigh-Speed Switching ApplicationsPreliminaryFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2193A 4V drive.[MCH6302]0.30.154 5 63 2 11 : Drain0.652 : Drain6 5 42.0 3 : Gate(Bottom view) 4 : Source5 : Drain6 : DrainSANYO : MCPH61 2 3(T

Ordering number : ENA2198 MCH6351 P-Channel Power MOSFEThttp://onsemi.com -12V, -9A, 16.9m, Single MCPH6 Features On-resistance RDS(on)1=14m(typ.) 1.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS -12 V Gate to Source Volta

Ordering number : ENA2206 MCH6353 P-Channel Power MOSFEThttp://onsemi.com -12V, -6.0A, 35m, Single MCPH6 Features On-resistance RDS(on)1=29m(typ.) 1.5V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS -12 V Gate to Source Volta

Ordering number : ENA0963BMCH6321P-Channel Power MOSFEThttp://onsemi.com 20V, 4A, 83m , Single MCPH6Features 1.8V drive Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --4 ADrain Current (Pulse) IDP

MCH6344 Power MOSFET 30V, 150m, 2A, Single P-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.comon resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on