MCH6421 - описание и поиск аналогов

Ordering number ENA1264 MCH6421 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6421 General-Purpose Switching Device Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12

MCH6421 Power MOSFET 20V, 38m , 5.5A, Single N-Channel This Power MOSFET is produced using ON Semiconductor s trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance VDSS RDS(on) Max

Ordering number ENA0688 MCH6429 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6429 Applications Features Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 1

MCH6448 Ordering number ENA2004 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET Low-Voltage Driver Switching MCH6448 Device Applications Features ON-resistance RDS(on)1=17m (typ.) 1.2V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Volt

Ordering number ENN6972 MCH6402 N-Channel Silicon MOSFET MCH6402 Ultrahigh-Speed Switching Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 4V drive. [MCH6402] 0.3 0.15 4 5 6 3 2 1 0.65 1 Drain 2 Drain 2.0 6 5 4 3 Gate 4 Source 5 Drain 6 Drain Specifications 1 2 3 SANYO MCPH6

Ordering number ENA0448 MCH6412 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6412 Applications Features Low ON-resistance. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 5 A

MCH6436 Ordering number ENA1565A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6436 Applications Features Low ON-resistance. Ultrahigh speed switching. 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS

Ordering number ENN6779 MCH6401 N-Channel Silicon MOSFET MCH6401 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6401] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications SANYO MCPH6 Absolute Maximum Ratings at

Ordering number ENN6780 MCH6403 N-Channel Silicon MOSFET MCH6403 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193 2.5V drive. [MCH6403] 0.3 0.15 6 5 4 1 2 3 0.65 1 Drain 2.0 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Specifications Absolute Maximum Ratings at Ta=25 C SANY

MCH6431 Ordering number ENA1852 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6431 Applications Features ON-resistance RDS(on)1=42m (typ.) 4V drive Halogen free compliance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour

Ordering number ENN7012 MCH6405 N-Channel Silicon MOSFET MCH6405 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2193A 2.5V drive. [MCH6405] 0.3 0.15 4 5 6 3 2 1 1 Drain 0.65 2 Drain 3 Gate 2.0 6 5 4 4 Source 5 Drain 6 Drain SANYO MCPH6 Specifications 1 2 3 Absolute Ma

MCH6437 Ordering number ENA1776 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6437 Applications Features ON-resistance RDS(on)1=18m (typ.) 1.8V drive Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 12 V Drai

MCH6444 Ordering number EN8935 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6444 Applications Features ON-resistance RDS(on)1=75m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source

MCH6445 Ordering number ENA1566 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device MCH6445 Applications Features 4V drive. Low ON-resistance. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4 A

MCH6448 Power MOSFET www.onsemi.com 20V, 22m , 8A, Single N-Channel VDSS RDS(on) Max ID Max Features 22m @ 4.5V Low On-Resistance 28m @ 2.5V 20V 8A 1.2V Drive 39m @ 1.8V ESD Diode-Protected Gate 124m @ 1.2V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C

MCH6436 Power MOSFET www.onsemi.com 30V, 34m , 6A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 34m @ 4.5V 1.8V Drive 30V 49m @ 2.5V 6A High Speed Switching 69m @ 1.8V ESD Diode-Protected Gate Pb-Free and RoHS Compliance Electrical Connection N-Channel Specifications Absolute Maximum Ratings at Ta = 25 C 1, 2, 5, 6

MCH6437 Power MOSFET www.onsemi.com 20V, 24m , 7A, Single N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 24m @ 4.5V 1.8V Drive 20V 35m @ 2.5V 7A ESD Diode-Protected Gate 65m @ 1.8V Pb-Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol Value 1, 2,

Ordering number ENA1566B MCH6445 N-Channel Power MOSFET http //onsemi.com 60V, 4A, 78m , Single MCPH6 Features 4V drive Low ON-resistance Protection diode in Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 4 A Drain Current (Pu

SMD Type MOSFET N-Channel Enhancement MOSFET MCH6405 (KCH6405) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 20V ID = 5.0 A RDS(ON) 41m (VGS = 4V) RDS(ON) 54m (VGS = 2.5V) 2 3 1 +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain Absolute Maximum Ratings Ta = 25 Pa