MMBFJ309L - параметры транзистора MOSFET, его аналоги, datasheet

MMBFJ309L Datasheet (PDF)

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MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1NChannel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 25 VdcCASE 31808, STYLE 10GateSource Voltage VGS 25 Vdc SOT23 (TO236AB)Gate Current IG 10 mAdcTHERMAL CHARACTERISTICS

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December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

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