MMBFJ310L - описание и поиск аналогов

MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 31

MMBFJ309L, MMBFJ310L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features 2 SOURCE Drain and Source are Interchangeable S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements; AEC-Q101 Qualified and GATE PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 DRAIN Co

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 N Channel 2 SOURCE MMBFJ310LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc CASE 318 08, STYLE 10 Gate Source Voltage VGS 25 Vdc SOT 23 (TO 236AB) Gate Current IG 10 mAdc THERMAL CHARACTERISTICS

December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 MMBFJ309 J310 MMBFJ310 G S SOT-23 G TO-92 Mark MMBFJ309

J309 MMBFJ309 J310 MMBFJ310 G S G TO-92 S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Absolute Maximum Ratings* TA = 25 C unless otherwise noted