MTD5P06V - аналоги, даташиты, параметры транзистора

MTD5P06V Datasheet (PDF)

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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD5P06V/DDesigner's Data SheetMTD5P06VTMOS V.Motorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETPChannel EnhancementMode Silicon Gate 5 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.450 OHMtance area product about o

0.1. Size:245K motorola
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0.2. Size:75K onsemi
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MTD5P06VPreferred DevicePower MOSFET5 Amps, 60 Volts P-Channel DPAKThis Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. Designed for low voltage, highspeed switching applications in power supplies, converters and powerhttp://onsemi.commotor controls, these devices are particularly well suited for bridgecircuits where diode speed and com

0.3. Size:828K cn vbsemi
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MTD5P06VT4Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

Другие MOSFET... MMBFJ310L , MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , IRFZ24N , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 .