Справочник MOSFET. NTA4153N

 

NTA4153N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTA4153N
   Маркировка: TR
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 0.3 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 6 V
   Пороговое напряжение включения |Ugs(th)|: 1.1 V
   Максимально допустимый постоянный ток стока |Id|: 0.915 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 1.82 nC
   Время нарастания (tr): 4.4 ns
   Выходная емкость (Cd): 16 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.23 Ohm
   Тип корпуса: SC75 SOT416

 Аналог (замена) для NTA4153N

 

 

NTA4153N Datasheet (PDF)

 ..1. Size:72K  onsemi
 nta4153n nte4153n nva4153n nve4153n.pdf

NTA4153N NTA4153N

NTA4153N, NTE4153N,NVA4153N, NVE4153NSmall Signal MOSFET20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89http://onsemi.comFeatures Low RDS(on) Improving System EfficiencyV(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated0.127 W @ 4.5 V ESD Protected Gate0.170 W @ 2.5 V20 V 915 mA NV Prefix for Automotive and Other Application

 ..2. Size:68K  onsemi
 nta4153nt1 nta4153n nte4153n.pdf

NTA4153N NTA4153N

NTA4153N, NTE4153NSmall Signal MOSFET20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89Featureshttp://onsemi.com Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V RatedV(BR)DSS RDS(on) TYP ID MAX ESD Protected Gate0.127 W @ 4.5 V Pb-Free Packages are Available0.170 W @ 2.5 V20 V 915 mAApplications0.242 W @ 1.8 V

 ..3. Size:1482K  kexin
 nta4153n.pdf

NTA4153N NTA4153N

SMD Type MOSFETN-Channel MOSFETNTA4153NSOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) = 20V ID = 915mA RDS(ON) 230m (VGS = 4.5V)3 RDS(ON) 275m (VGS = 2.5V)0.30.050.5+0.1 RDS(ON) 700m (VGS = 1.8V) -0.1 RDS(ON) 950m (VGS = 1.5V)1 Gate2 Source3 Drain31

 0.1. Size:1557K  cn tech public
 tpnta4153nt1g.pdf

NTA4153N NTA4153N

marking: A

 8.1. Size:70K  onsemi
 nta4151p nte4151p.pdf

NTA4153N NTA4153N

NTA4151P, NTE4151PSmall Signal MOSFET-20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89Featureswww.onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm)V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package0.26 W @ -4.5 V ESD Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and

 8.2. Size:66K  onsemi
 nta4151pt1 nta4151p nte4151p.pdf

NTA4153N NTA4153N

NTA4151P, NTE4151PSmall Signal MOSFET-20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89Features http://onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package0.26 W @ -4.5 V ESD Protected Gate-20 V 0.35 W @ -2.5 V -760 mA Pb-Free Packages are

 8.3. Size:1482K  kexin
 nta4151p.pdf

NTA4153N NTA4153N

SMD Type MOSFETP-Channel MOSFETNTA4151P SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 VDS (V) =-20V ID =-760m A (VGS =-4.5V) RDS(ON) 260m (VGS =-4.5V)3D RDS(ON) 350m (VGS =-2.5V) 0.30.05+0.1 RDS(ON) 490m (VGS =-1.8V) 0.5-0.11.Gate2.Source3.DrainGS Absolute Maximu

 8.4. Size:1581K  cn tech public
 tpnta4151pt1g.pdf

NTA4153N NTA4153N

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