Справочник MOSFET. NTD3055-094

 

NTD3055-094 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD3055-094
   Маркировка: 55094
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 10.9 nC
   trⓘ - Время нарастания: 32.3 ns
   Cossⓘ - Выходная емкость: 107 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.094 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTD3055-094

 

 

NTD3055-094 Datasheet (PDF)

 ..1. Size:146K  onsemi
 ntd3055-094 nvd3055-094.pdf

NTD3055-094 NTD3055-094

NTD3055-094, NVD3055-094MOSFET Power,N-Channel, DPAK/IPAK12 A, 60 VDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on)60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery Time D

 ..2. Size:147K  onsemi
 ntd3055-094.pdf

NTD3055-094 NTD3055-094

NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve

 0.1. Size:144K  onsemi
 ntd3055-094-1 ntd3055-094-1g.pdf

NTD3055-094 NTD3055-094

NTD3055-094Power MOSFET12 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 94 mW 12 A Lower and Tighter VSD Lower Diode Reverse Recovery TimeN-Channel Lower Reve

 6.1. Size:123K  onsemi
 ntd3055-150 nvd3055-150.pdf

NTD3055-094 NTD3055-094

NTD3055-150,NVD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAK/IPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgewww.onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 122 mW (Typ) NVD Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change Requirements

 6.2. Size:134K  onsemi
 ntd3055-150.pdf

NTD3055-094 NTD3055-094

NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co

 6.3. Size:130K  onsemi
 ntd3055-150t4.pdf

NTD3055-094 NTD3055-094

NTD3055-150Power MOSFET9.0 A, 60 V, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures9.0 AMPERES, 60 VOLTS Pb-Free Packages are AvailableRDS(on) = 122 mW (Typ)Typical ApplicationsN-Channel Power SuppliesD Converters Power Motor Co

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