Справочник MOSFET. NTD3055L104

 

NTD3055L104 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD3055L104
   Маркировка: 55L104
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 7.4 nC
   trⓘ - Время нарастания: 104 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.104 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTD3055L104

 

 

NTD3055L104 Datasheet (PDF)

 ..1. Size:91K  onsemi
ntd3055l104 ntdv3055l104.pdf

NTD3055L104
NTD3055L104

NTD3055L104,NTDV3055L104Power MOSFET12 A, 60 V, Logic Level N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.www.onsemi.comFeatures Lower RDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on)60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov

 ..2. Size:120K  onsemi
ntd3055l104.pdf

NTD3055L104
NTD3055L104

NTD3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery TimeN

 ..3. Size:821K  cn vbsemi
ntd3055l104.pdf

NTD3055L104
NTD3055L104

NTD3055L104www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon

 0.1. Size:154K  onsemi
ntd3055l104t4g ntdv3055l104.pdf

NTD3055L104
NTD3055L104

NTD3055L104,NTDV3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.FeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on)60 V 104 mW 12 A Lower VDS(on) Tighter VSD SpecificationN-Channel Lower Di

 5.1. Size:238K  onsemi
ntd3055l170 nvd3055l170.pdf

NTD3055L104
NTD3055L104

NTD3055L170,NVD3055L170MOSFET Power,N-Channel, Logic Level,DPAK/IPAKwww.onsemi.com9.0 A, 60 VDesigned for low voltage, high speed switching applications in9.0 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgeRDS(on) = 170 mWcircuits.DFeatures NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Chang

 5.2. Size:132K  onsemi
ntd3055l170.pdf

NTD3055L104
NTD3055L104

NTD3055L170Power MOSFET9.0 Amps, 60 Volts, Logic Level,N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 170 mW These are Pb-Free DevicesN-ChannelTypical ApplicationsD Power Supplies Converters Powe

 5.3. Size:123K  onsemi
ntd3055l170t4g.pdf

NTD3055L104
NTD3055L104

NTD3055L170,NVD3055L170Power MOSFET9.0 A, 60 V, Logic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeatures NVD Prefix for Automotive and Other Applications Requiring RDS(on) = 170 mWUnique Site and Control Change Requirement

 5.4. Size:852K  cn vbsemi
ntd3055l170t4g.pdf

NTD3055L104
NTD3055L104

NTD3055L170T4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters

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