NTD5414N
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTD5414N
Маркировка: 5414N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 24
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 25
nC
trⓘ -
Время нарастания: 58
ns
Cossⓘ - Выходная емкость: 165
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.037
Ohm
Тип корпуса:
DPAK
Аналог (замена) для NTD5414N
NTD5414N
Datasheet (PDF)
..1. Size:103K onsemi
ntd5414n.pdf 
NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp
0.1. Size:104K onsemi
ntd5414nt4g.pdf 
NTD5414NPower MOSFET24 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 37 mW @ 10 V 24 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Power Supp
8.1. Size:103K onsemi
ntd5413n ntd5413nt4g.pdf 
NTD5413NPower MOSFET30 Amps, 60 Volts Single N-ChannelDPAKFeatures Low RDS(on)http://onsemi.com High Current Capability Avalanche Energy SpecifiedID MAX These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX (Note 1)Applications60 V 26 mW @ 10 V 30 A LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD Switch Mod
9.1. Size:120K onsemi
ntd5406n.pdf 
NTD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless
9.2. Size:135K onsemi
ntd5407ng std5407nt4g.pdf 
NTD5407N, STD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 21 mW @ 10 V 38 AApplications Electronic Brake Systems Electronic Power SteeringN-Ch
9.3. Size:120K onsemi
ntd5407n.pdf 
NTD5407NPower MOSFET40 V, 38 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXV(BR)DSS RDS(ON) TYP (Note 1)Applications40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge CircuitsN-ChannelDMAXIMUM RATINGS (TJ = 25C unless ot
9.4. Size:136K onsemi
ntd5406ng std5406nt4g.pdf 
NTD5406N, STD5406NPower MOSFET40 V, 70 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 8.7 m @ 10 V 70 AApplications Electronic Brake Systems Electronic Power SteeringN-
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