NTGS3433 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTGS3433
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток (Uds): 12 V
Предельно допустимое напряжение затвор-исток (Ugs): 8 V
Максимально допустимый постоянный ток стока (Id): 3.3 A
Сопротивление сток-исток открытого транзистора (Rds): 0.055 Ohm
Тип корпуса: TSOP6
NTGS3433 Datasheet (PDF)
1.1. ntgs3433t1.pdf 
Size:132K _onsemi
NTGS3433T1 MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products, i.e.: Cell
4.1. ntgs3443t1.pdf Size:103K _onsemi
NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 4.4 AMPERES Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW Pb-Free Package is Available Applications P-Channel 1 2 5 6 Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Tele
4.2. ntgs3446.pdf Size:136K _onsemi
NTGS3446 Power MOSFET 20 V, 5.1 A Single N-Channel, TSOP6 Features Ultra Low RDS(on) http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified 20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available N-Channel Appl
4.3. ntgs3441p-d.pdf Size:64K _onsemi
NTGS3441P Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses http://onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 91 mW @ 4.5 V High Side Switch in DC-DC Converters -20 V 144 mW @ 2.7 V -3.16 A Battery Management 1
4.4. ntgs3455t1.pdf Size:104K _onsemi
NTGS3455T1 MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6 Features http://onsemi.com Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products, i.e.: Cellul
4.5. ntgs3441t1.pdf Size:136K _onsemi
NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 1 AMPERE Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 90 mW Pb-Free Package is Available Applications P-Channel Power Management in Portable and Battery-Powered Products, 1 2 5 6 i.e.: Cellular and Cordless Telephones
Другие MOSFET... NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , IRF540N , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 .
