NTMFS4826NE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS4826NE
Маркировка: 4826NE
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.16 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.5 nC
Время нарастания (tr): 39.8 ns
Выходная емкость (Cd): 333 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0059 Ohm
Тип корпуса: SO8FL
Аналог (замена) для NTMFS4826NE
NTMFS4826NE Datasheet (PDF)
ntmfs4826ne.pdf
NTMFS4826NEPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX5.9 mW @ 10 V 66 AApplications30 V8.7 mW @ 4.5 V 55
ntmfs4825nfe.pdf
NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V
ntmfs4821nt1g.pdf
NTMFS4821NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V Refer to Application
ntmfs4825nfet1g.pdf
NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V
ntmfs4823n.pdf
NTMFS4823NPower MOSFET30 V, 30 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D10.5 mW @ 10 V30 V30 A CPU Pow
ntmfs4823nt1g.pdf
NTMFS4823NPower MOSFET30 V, 30 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications Refer to Application Note AND8195/D10.5 mW @ 10 V30 V30 A CPU Pow
ntmfs4821n.pdf
NTMFS4821NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V Refer to Application
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