Справочник MOSFET. NTMFS4826NE

 

NTMFS4826NE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTMFS4826NE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.16 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 39.8 ns
   Cossⓘ - Выходная емкость: 333 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0059 Ohm
   Тип корпуса: SO8FL
     - подбор MOSFET транзистора по параметрам

 

NTMFS4826NE Datasheet (PDF)

 ..1. Size:116K  onsemi
 ntmfs4826ne.pdf pdf_icon

NTMFS4826NE

NTMFS4826NEPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling Capability These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX5.9 mW @ 10 V 66 AApplications30 V8.7 mW @ 4.5 V 55

 6.1. Size:115K  onsemi
 ntmfs4825nfe.pdf pdf_icon

NTMFS4826NE

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V

 6.2. Size:137K  onsemi
 ntmfs4821nt1g.pdf pdf_icon

NTMFS4826NE

NTMFS4821NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V Refer to Application

 6.3. Size:104K  onsemi
 ntmfs4825nfet1g.pdf pdf_icon

NTMFS4826NE

NTMFS4825NFEPower MOSFET30 V, 171 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Includes Schottky Diode Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Device2.0 mW @ 10 V 171 A30 V

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