NTMFS4835N. Аналоги и основные параметры
Наименование производителя: NTMFS4835N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.27 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 670 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: SO8FL
Аналог (замена) для NTMFS4835N
- подборⓘ MOSFET транзистора по параметрам
NTMFS4835N даташит
..1. Size:136K onsemi
ntmfs4835n.pdf 
NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU P
0.1. Size:136K onsemi
ntmfs4835nt1g.pdf 
NTMFS4835N Power MOSFET 30 V, 104 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 104 A CPU Po
6.1. Size:139K onsemi
ntmfs4839n.pdf 
NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.
6.2. Size:134K onsemi
ntmfs4837nt1g.pdf 
NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery 3
6.3. Size:109K onsemi
ntmfs4839nht1g.pdf 
NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A
6.4. Size:109K onsemi
ntmfs4839nt1g.pdf 
NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 66 A 9.5 mW @ 4.5
6.5. Size:136K onsemi
ntmfs4837nht1g.pdf 
NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application
6.6. Size:135K onsemi
ntmfs4836n.pdf 
NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5
6.7. Size:139K onsemi
ntmfs4839nh.pdf 
NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features Low RDS(ON) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Low RG These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 5.5 mW @ 10 V Refer to Application Note AND8195/D 30 V 64 A
6.9. Size:139K onsemi
ntmfs4833nt1g.pdf 
NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 2.0 mW @ 10 V 30 V 191 A CPU Po
6.10. Size:139K onsemi
ntmfs4833ns.pdf 
NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m
6.11. Size:89K onsemi
ntmfs4833n.pdf 
NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8 FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX CPU Power Delivery DC-DC Converters 2.0 mW @ 10 V 30 V 191 A
6.12. Size:135K onsemi
ntmfs4834n.pdf 
NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @
6.13. Size:136K onsemi
ntmfs4836nt1g.pdf 
NTMFS4836N Power MOSFET 30 V, 90 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 4.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 90 A 6.0 mW @ 4.5
6.14. Size:134K onsemi
ntmfs4837n-d.pdf 
NTMFS4837N Power MOSFET 30 V, 74 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices* Applications V(BR)DSS RDS(ON) MAX ID MAX Refer to Application Note AND8195/D 5.0 mW @ 10 V CPU Power Delivery
6.15. Size:137K onsemi
ntmfs4837nh.pdf 
NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices* 5.0 mW @ 10 V 30 V 75 A Applications 8.0 mW @ 4.5 V Refer to Application
6.16. Size:139K onsemi
ntmfs4833nst1g.pdf 
NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m
6.17. Size:134K onsemi
ntmfs4834nt1g.pdf 
NTMFS4834N Power MOSFET 30 V, 130 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 3.0 mW @ 10 V Refer to Application Note AND8195/D 30 V 130 A 4.0 mW @ 4
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