NTMFS4846N
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTMFS4846N
Маркировка: 4846N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20.3
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 21.8
nC
trⓘ -
Время нарастания: 34
ns
Cossⓘ - Выходная емкость: 562
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034
Ohm
Тип корпуса:
SO8FL
- подбор MOSFET транзистора по параметрам
NTMFS4846N
Datasheet (PDF)
..1. Size:137K onsemi
ntmfs4846n.pdf 

NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application No
0.1. Size:106K onsemi
ntmfs4846nt1g.pdf 

NTMFS4846NPower MOSFET30 V, 100 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V Refer to Application Not
6.1. Size:106K onsemi
ntmfs4847nat1g ntmfs4847nt1g.pdf 

NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application Not
6.2. Size:107K onsemi
ntmfs4849nt1g.pdf 

NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Note
6.3. Size:107K onsemi
ntmfs4845nt1g.pdf 

NTMFS4845NPower MOSFET30 V, 115 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.9 mW @ 10 V Refer to Application No
6.4. Size:137K onsemi
ntmfs4845n.pdf 

NTMFS4845NPower MOSFET30 V, 115 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications2.9 mW @ 10 V Refer to Application N
6.5. Size:136K onsemi
ntmfs4847n.pdf 

NTMFS4847NPower MOSFET30 V, 85 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications4.1 mW @ 10 V Refer to Application No
6.6. Size:138K onsemi
ntmfs4841nh.pdf 

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
6.7. Size:145K onsemi
ntmfs4841n.pdf 

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4
6.8. Size:108K onsemi
ntmfs4841nht1g.pdf 

NTMFS4841NHPower MOSFET30 V, 59 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Low RG These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V59 A
6.9. Size:115K onsemi
ntmfs4841nt1g.pdf 

NTMFS4841NPower MOSFET30 V, 57 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications7.0 mW @ 10 V Refer to Application Note AND8195/D30 V57 A11.4 mW @ 4.
6.10. Size:137K onsemi
ntmfs4849n.pdf 

NTMFS4849NPower MOSFET30 V, 71 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.1 mW @ 10 V Refer to Application Not
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