NTMFS4933N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS4933N
Маркировка: 4933N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.74 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 34 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 148 nC
Время нарастания (tr): 33 ns
Выходная емкость (Cd): 3230 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0012 Ohm
Тип корпуса: SO8FL
Аналог (замена) для NTMFS4933N
NTMFS4933N Datasheet (PDF)
ntmfs4933n.pdf
NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2
ntmfs4933nt1g.pdf
NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2
ntmfs4939n-d.pdf
NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP
ntmfs4936nt1g.pdf
NTMFS4936N,NTMFS4936NCPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like PerformanceV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen
ntmfs4934n.pdf
NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0
ntmfs4939n.pdf
NTMFS4939NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 53 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 VCompliant 30 V 53 A8.0 mW @ 4.5 V
ntmfs4937nt1g.pdf
NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V CPU Power Del
ntmfs4939nt1g.pdf
NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP
ntmfs4936n-d.pdf
NTMFS4936NPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON
ntmfs4936n ntmfs4936nc.pdf
NTMFS4936N,NTMFS4936NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft3.8 mW @ 10 VRecovery, Provides Schottky-Like Performance30 V 79 A The
ntmfs4935n.pdf
NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Deli
ntmfs4934nt1g.pdf
NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0
ntmfs4931n.pdf
NTMFS4931NPower MOSFET30 V, 246 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control1.1 mW @ 10 V Refer to Application Note AND8195/D for Mounting I
ntmfs4935nbt1g ntmfs4935nct1g ntmfs4935nt1g.pdf
NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Del
ntmfs4937n.pdf
NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.5 mW @ 10 V CPU Power Del
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