NTMFS5830NL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS5830NL
Маркировка: 5830NL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.2 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 28 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 113 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 750 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0023 Ohm
Тип корпуса: SO8FL
Аналог (замена) для NTMFS5830NL
NTMFS5830NL Datasheet (PDF)
ntmfs5830nl.pdf
NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @
ntmfs5830nlt1g.pdf
NTMFS5830NLPower MOSFET40 V, 172 A, 2.3 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)2.3 mW @
ntmfs5834nlt1g.pdf
NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on)http://onsemi.com Low Capacitance Optimized Gate ChargeV(BR)DSS RDS(ON) MAX ID MAX NVMF Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 AQualified and PPAP Capable13.6 mW @ 4.5 V
ntmfs5834nl nvmfs5834nl.pdf
NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6
ntmfs5834nl.pdf
NTMFS5834NL,NVMFS5834NLPower MOSFET40 V, 75 A, 9.3 mW, Single N-ChannelFeatures Low RDS(on) Low Capacitance http://onsemi.com Optimized Gate Charge NVMFS5834NLWF - Wettable Flanks ProductV(BR)DSS RDS(ON) MAX ID MAX NVMFS Prefix for Automotive and Other Applications Requiring9.3 mW @ 10 VUnique Site and Control Change Requirements; AEC-Q10140 V 75 A13.6
ntmfs5832nlt1g.pdf
NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @
ntmfs5832nl.pdf
NTMFS5832NLPower MOSFET40 V, 111 A, 4.2 mWFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)4.2 mW @
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