NTMS4503N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMS4503N
Маркировка: 4503N
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 28 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 23 nC
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 1000 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: SOIC8
NTMS4503N Datasheet (PDF)
ntms4503n-d ntms4503nr2.pdf
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NTMS4503NPower MOSFET28 V, 14 A, N-Channel, SOIC-8Features Low RDS(on)http://onsemi.com High Power and Current Handling Capability Low Gate ChargeID Max Pb-Free Package is Available V(BR)DSS RDS(on) Typ(Note 1)Applications7.0 mW @ 10 V28 V 14 A DC/DC Converters8.8 mW @ 4.5 V Motor Drives Synchronous Rectifier - POLD Buck Low-SideMA
ntms4916n.pdf
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NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4807n-d ntms4807nr2g.pdf
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NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
ntms4176p ntms4176pr2g.pdf
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NTMS4176PPower MOSFET-30 V, -9.6 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device18 mW @ -10 V-30 V -9.6 AApplications30 m
ntms4n01r2-d ntms4n01r2g.pdf
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NTMS4N01R2Power MOSFET4.2 Amps, 20 VoltsN-Channel Enhancement-ModeSingle SO-8 PackageFeatureshttp://onsemi.com High Density Power MOSFET with Ultra Low RDS(on) ProvidingHigher Efficiency4.2 AMPERES, 20 VOLTS Miniature SO-8 Surface Mount Package Saving Board Space;Mounting Information for the SO-8 Package is Provided0.045 W @ VGS = 4.5 V IDSS Specified at Eleva
ntms4107n-d ntms4107nr2g.pdf
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NTMS4107NPower MOSFET30 V, 18 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for Low Side Synchronous Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAX3.4 mW @ 10 VApplications30 V 18 A Notebook Computer Vcore Applications4.7
ntms4873nf-d ntms4873nfr2g.pdf
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NTMS4873NFPower MOSFET30 V, 11.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Includes SyncFET Schottky Diodehttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device12 mW @ 10 V
ntms4706n-d ntms4706nr2 ntms4706nr2g.pdf
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NTMS4706NPower MOSFET30 V, 10.3 A, Single N-Channel, SO-8Features Low RDS(on) Low Gate Charge Standard SO-8 Single Packagehttp://onsemi.com Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications(Note 1) Notebooks, Graphics Cards9.0 mW @ 10 V Synchronous Rectification30 V 10.3 A11.4 mW @ 4.5 V High Side Switch DC-DC Convert
ntms4939n.pdf
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NTMS4939NMOSFET Power,N-Channel, SO-830 V, 12.5 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.4 mW @ 10 V30 V 12.5 AApplications11 mW @
ntms4939nr2g.pdf
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NTMS4939NPower MOSFET30 V, 12.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters8.4 mW @ 10 V30 V
ntms4700n ntms4700nr2.pdf
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NTMS4700NPower MOSFET30 V, 14.5 A, Single N-Channel, SO-8Features Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG Optimized for High Side Control Applicationshttp://onsemi.com High Speed Switching Capability Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAXApplications6.0 mW @ 10 V30 V 14.5 A Notebook Computer Vcore Applications7.3
ntms4937nr2g.pdf
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NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V
ntms4704n.pdf
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NTMS4704NPower MOSFET30 V, 12.3 A, Single N-Channel, SO-8Features Low RDS(on) Low Gate Chargehttp://onsemi.com Standard SO-8 Single Package Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAXApplications7.5 mW @ 10 V Notebooks, Graphics Cards30 V 12.3 A Synchronous Rectification 10 mW @ 4.5 V High Side Switch DC-DC ConvertersN-Channe
ntms4816nr2g.pdf
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NTMS4816N, NVMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com AEC-Q101 Qualified and PPAP Capable - NVMS4816N These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications10
ntms4177p ntms4177pr2g.pdf
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NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19
ntms4916nr2g.pdf
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NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4404nr2.pdf
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NTMS4404NPower MOSFET30 V, 12 A, Single N-Channel, SO-8Features High Density Power MOSFET with Ultra Low RDS(on) for HigherEfficiencyhttp://onsemi.com Miniature SO-8 Surface Mount Package Saving Board Space IDSS Specified at Elevated TemperatureV(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery9.7 mW @ 10 V30 V 12 AApplications15.5 mW @
ntms4920n.pdf
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NTMS4920NPower MOSFET30 V, 17 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters4.3 mW @ 10 V30 V 1
ntms4802n ntms4802nr2g.pdf
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NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET
ntms4917n.pdf
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NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
ntms4917nr2g.pdf
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NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
ntms4800n.pdf
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NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4800nr2g.pdf
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NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4872n-d ntms4872nr2g.pdf
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NTMS4872NPower MOSFET30 V, 10.2 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device13.5 mW @ 10 VApplications30 V 10.2 A Disk
ntms4801n.pdf
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NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4937n.pdf
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NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V
ntms4705n ntms4705nr2g.pdf
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NTMS4705NPower MOSFET30 V, 12 A, Single N-Channel, SO-8Features Low RDS(on) Low Gate Chargehttp://onsemi.com Standard SO-8 Single Package Pb-Free Package is AvailableV(BR)DSS RDS(ON) TYP ID MAX(Note 1)Applications Notebooks, Graphics Cards8.0 mW @ 10 V30 V 12 A Synchronous Rectification10.5 mW @ 4.5 V High Side Switch DC-DC Converters
ntms4816n.pdf
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NTMS4816NPower MOSFET30 V, 11 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications10 mW @ 10 V Disk Drives30 V 11 A DC-DC Converters 16 mW @ 4.5 V Printers
ntms4807n.pdf
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NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
ntms4p01r2.pdf
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NTMS4P01R2Power MOSFET-4.5 Amps, -12 VoltsP-Channel Enhancement-ModeSingle SO-8 PackageFeatureshttp://onsemi.com High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency Miniature SO-8 Surface Mount Package - Saves Board SpaceVDSS RDS(ON) TYP ID MAX Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature -12 V3
ntms4801nr2g.pdf
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NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4177p.pdf
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NTMS4177PPower MOSFET-30 V, -11.4 A, P-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device12 mW @ -10 V-30 V -11.4 AApplications19
ntms4101pr2.pdf
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NTMS4101PTrench Power MOSFET20 V, 9.0 A, Single P-Channel, SO-8Features Leading -20 V Trench for Low RDS(on) Surface Mount SO-8 Package Saves Board Spacehttp://onsemi.com Lead-Free Package for Green Manufacturing (G Suffix)Applications Power ManagementV(BR)DSS RDS(on) TYP ID MAX Load Switch16 mW @ -4.5 V Battery Protection-20 V -9.0 A22 mW @ -2.5
ntms4177pr.pdf
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NTMS4177PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop P
Другие MOSFET... NTMFS4943N , NTMFS5830NL , NTMFS5832NL , NTMFS5834NL , NTMFS5844NL , TK2R9E10PL , NTMS4176P , NTMS4177P , IRFP460 , NTMS4800N , NTMS4801N , NTMS4802N , NTMS4807N , NTMS4816N , NTMS4873NF , NTMS4916N , NTMS4917N .
![NTMS4503N](https://alltransistors.com/images/us.png)
![NTMS4503N](https://alltransistors.com/images/es.png)
![NTMS4503N](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100