NTS4101P - параметры транзистора MOSFET, его аналоги, datasheet

NTS4101P Datasheet (PDF)

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NTS4101PPower MOSFET-20 V, -1.37 A, Single P-Channel, SC-70Features Leading -20 V Trench for Low RDS(on) http://onsemi.com -2.5 V Rated for Low Voltage Gate DriveV(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2x2 mm)83 mW @ -4.5 V Pb-Free Package is Available-20 V88 mW @ -3.6 V -1.37 AApplications High Side Load Switch 104 mW @ -2.5

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NTS4101PT1Gwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Conv

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TPNTS4 1 01 PT1 GP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPNTS4101PT1G 3000 7DSGSOT-323Absolute Maximum Ratings (TA=

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