NTTFS4937N - параметры транзистора MOSFET, его аналоги, datasheet

NTTFS4937N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NTTFS4937N
   Маркировка: 4937
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.24 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 35.5 nC
   trⓘ - Время нарастания: 21.2 ns
   Cossⓘ - Выходная емкость: 893 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: WDFN8

Аналог (замена) для NTTFS4937N

NTTFS4937N Datasheet (PDF)

..1. Size:194K onsemi
nttfs4937n.pdf

NTTFS4937N

NTTFS4937NMOSFET Power, Single,N-Channel, m8FL30 V, 75 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.5 mW @ 10 V30 V 75 ACompliant7.0 mW @ 4.5 VA

0.1. Size:111K onsemi
nttfs4937n-d.pdf

NTTFS4937N

NTTFS4937NPower MOSFET30 V, 75 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.5 mW @ 10 V30 V 75 A Low-S

0.2. Size:112K onsemi
nttfs4937ntag.pdf

NTTFS4937N

6.1. Size:195K onsemi
nttfs4932n.pdf

NTTFS4937N

NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA

6.2. Size:113K onsemi
nttfs4932ntag.pdf

NTTFS4937N

NTTFS4932NPower MOSFET30 V, 79 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications4.0 mW @ 10 V30 V 79 A Low-S

6.3. Size:127K onsemi
nttfs4930n.pdf

NTTFS4937N

NTTFS4930NPower MOSFET30 V, 23 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications23 mW @ 10 V30 V 23 A DC-DC

6.4. Size:111K onsemi
nttfs4939n-d.pdf

NTTFS4937N

NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S

6.5. Size:193K onsemi
nttfs4939n.pdf

NTTFS4937N

NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA

6.6. Size:111K onsemi
nttfs4939ntag.pdf

NTTFS4937N