SCH1335 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SCH1335
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 0.8 W
Предельно допустимое напряжение сток-исток |Uds|: 12 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Минимальное напряжение отсечки |Vgs(off)|: 0.4 V
Максимально допустимый постоянный ток стока |Id|: 2.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 3.1 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.086 Ohm
Тип корпуса: SCH6
SCH1335 Datasheet (PDF)
sch1335.pdf
SCH1335Ordering number : ENA1939SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1335ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
sch1330.pdf
SCH1330Ordering number : ENA1460ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1330ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --2
sch1331.pdf
SCH1331Ordering number : ENA1530SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1331ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12
sch1337.pdf
SCH1337Ordering number : ENA1867ASANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1337ApplicationsFeatures ON-resistance RDS(on)1=115m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-So
sch1333.pdf
SCH1333Ordering number : ENA1531SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1333ApplicationsFeatures 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (D
sch1332.pdf
SCH1332Ordering number : ENA1528SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1332ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20
sch1334.pdf
SCH1334Ordering number : ENA1656SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSCH1334ApplicationsFeatures Low ON-resistance. High-speed switching. 1.8V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VG
Другие MOSFET... NVTFS5116PL , NVTFS5811NL , NVTFS5820NL , NVTFS5826NL , SCH1330 , SCH1331 , SCH1332 , SCH1334 , P60NF06 , SCH1337 , SCH1430 , SCH1433 , SCH1434 , SCH1435 , SCH1436 , SCH1439 , SFT1341 .
