Справочник MOSFET. SFT1350

 

SFT1350 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFT1350
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 23 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.7 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 19 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TP

 Аналог (замена) для SFT1350

 

 

SFT1350 Datasheet (PDF)

 ..1. Size:361K  sanyo
 sft1350.pdf

SFT1350 SFT1350

SFT1350Ordering number : ENA1874SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1350ApplicationsFeatures ON-resistance RDS(on)1=45m (typ.) Input Capacitance Ciss=590pF(typ.) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain

 9.1. Size:491K  sanyo
 sft1342.pdf

SFT1350 SFT1350

SFT1342Ordering number : ENA1559SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1342ApplicationsFeatures Motor drive application. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC)

 9.2. Size:486K  sanyo
 sft1341.pdf

SFT1350 SFT1350

SFT1341Ordering number : ENA1444SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1341ApplicationsFeatures 1.8V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --40 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --10 ADrain Current (P

 9.3. Size:358K  sanyo
 sft1345.pdf

SFT1350 SFT1350

SFT1345Ordering number : EN8987SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1345ApplicationsFeatures ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

 9.4. Size:354K  onsemi
 sft1342.pdf

SFT1350 SFT1350

Ordering number : ENA1559B SFT1342 Power MOSFET http://onsemi.com 60V, 62m, 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C 3Parameter Symbol Value UnitV

 9.5. Size:412K  onsemi
 sft1345.pdf

SFT1350 SFT1350

SFT1345 Power MOSFET 100V, 275m, 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductors www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Ma

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