SFT1350 - описание и поиск аналогов

SFT1350 Ordering number ENA1874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1350 Applications Features ON-resistance RDS(on)1=45m (typ.) Input Capacitance Ciss=590pF(typ.) 4.5V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain

SFT1342 Ordering number ENA1559 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1342 Applications Features Motor drive application. 4V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC)

SFT1341 Ordering number ENA1444 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1341 Applications Features 1.8V drive. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --40 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID --10 A Drain Current (P

SFT1345 Ordering number EN8987 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device SFT1345 Applications Features ON-resistance RDS(on)1=210m (typ.) Input Capacitance Ciss=1020pF(typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-

Ordering number ENA1559B SFT1342 Power MOSFET http //onsemi.com 60V, 62m , 12A, Single P-Channel Features Electrical Connection P-Channel Low On-Resistance High Speed Switching 2, 4 Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance 1 Specifications Absolute Maximum Ratings at Ta = 25 C 3 Parameter Symbol Value Unit V

SFT1345 Power MOSFET 100V, 275m , 11A, Single P-Channel This P-Channel Power MOSFET is produced using ON Semiconductor s www.onsemi.com trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Ma