SFT1423Ordering number : ENA1509SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1423ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 2 A

SFT1440Ordering number : ENA1816SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1440ApplicationsFeatures ON-resistance RDS(on)=6.2 (typ.) Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID

SFT1446Ordering number : ENA1742SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1446ApplicationsFeatures ON-resistance RDS(on)1=39m (typ) Input Capacitance Ciss=750pF(typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-

SFT1450Ordering number : ENA1743SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1450ApplicationsFeatures ON-resistance RDS(on)1=21m (typ) Input Capacitance Ciss=715pF(typ) 4.5V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-t

SFT1445Ordering number : ENA1897SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1445ApplicationsFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

SFT1443Ordering number : ENA1896SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1443ApplicationsFeatures ON-resistance RDS(on)1=180m (typ.) Input Capacitance Ciss=490pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

SFT1431Ordering number : ENA1624SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1431ApplicationsFeatures Motor drive application. Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20

Ordering number : EN9051BSFT1452N-Channel Power MOSFEThttp://onsemi.com250V, 3A, 2.4 , Single DPAK/IPAKFeatures ON-resistance RDS(on)=1.8 (typ.) Input Capacitance Ciss=210pF(typ.) 10V drive Halogen free compliance ESD Diode-Protected GateSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Sou

Ordering number : ENA1897ASFT1445N-Channel Power MOSFEThttp://onsemi.com100V, 17A, 111m , Single TP/TP-FAFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

Ordering number : ENA1896B SFT1443 Power MOSFET http://onsemi.com 100V, 225m, 9A, Single N-Channel Features Electrical Connection N-Channel High Speed Switching ESD Diode-Protected Gate 2,4 Low Gate Charge Pb-free, Halogen-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit3V Drain to Sou

SFT1443www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (