Справочник MOSFET. SFT1443

 

SFT1443 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFT1443
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 19 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9.8 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.205 Ohm
   Тип корпуса: TP

 Аналог (замена) для SFT1443

 

 

SFT1443 Datasheet (PDF)

 ..1. Size:361K  sanyo
 sft1443.pdf

SFT1443 SFT1443

SFT1443Ordering number : ENA1896SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1443ApplicationsFeatures ON-resistance RDS(on)1=180m (typ.) Input Capacitance Ciss=490pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

 ..2. Size:359K  onsemi
 sft1443.pdf

SFT1443 SFT1443

Ordering number : ENA1896B SFT1443 Power MOSFET http://onsemi.com 100V, 225m, 9A, Single N-Channel Features Electrical Connection N-Channel High Speed Switching ESD Diode-Protected Gate 2,4 Low Gate Charge Pb-free, Halogen-free and RoHS Compliance 1Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Value Unit3V Drain to Sou

 ..3. Size:920K  cn vbsemi
 sft1443.pdf

SFT1443 SFT1443

SFT1443www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

 8.1. Size:351K  sanyo
 sft1440.pdf

SFT1443 SFT1443

SFT1440Ordering number : ENA1816SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1440ApplicationsFeatures ON-resistance RDS(on)=6.2 (typ.) Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID

 8.2. Size:339K  sanyo
 sft1446.pdf

SFT1443 SFT1443

SFT1446Ordering number : ENA1742SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1446ApplicationsFeatures ON-resistance RDS(on)1=39m (typ) Input Capacitance Ciss=750pF(typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-

 8.3. Size:363K  sanyo
 sft1445.pdf

SFT1443 SFT1443

SFT1445Ordering number : ENA1897SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceSFT1445ApplicationsFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-

 8.4. Size:418K  onsemi
 sft1445.pdf

SFT1443 SFT1443

Ordering number : ENA1897ASFT1445N-Channel Power MOSFEThttp://onsemi.com100V, 17A, 111m , Single TP/TP-FAFeatures ON-resistance RDS(on)1=85m (typ.) Input Capacitance Ciss=1030pF(typ.) 4V drive Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

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